Efficient hybrid organic/inorganic photovoltaic cells utilizing n-type pentacene and intrinsic/p-type hydrogenated amorphous silicon

Ching Hsun Chao; Chien Hung Chan; Fu Chiao Wu; Jung Jie Huang; Shui Yang Lien; Ko Wei Weng; Horng Long Cheng

doi:10.1016/j.solmat.2011.04.014

Efficient hybrid organic/inorganic photovoltaic cells utilizing n-type pentacene and intrinsic/p-type hydrogenated amorphous silicon

Ching Hsun Chao, Chien Hung Chan, Fu Chiao Wu, Jung Jie Huang, Shui Yang Lien, Ko Wei Weng, Horng Long Cheng

Department of Photonics

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We demonstrate efficient hybrid inorganic/organic pin photovoltaic (PV) devices with a p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properties of the pentacene films were investigated using absorption spectroscopy, X-ray diffraction, and scanning electron microscopy. The maximum power conversion efficiency can be increased by one order with respect to the devices using different thicknesses of a pentacene layer from 0.32% at 10 nm to above 3.0% at 30 nm. Photocarriers in PVs are suggested to be mainly generated in the intrinsic a-Si:H layer. The pentacene layer is used as the exciton-blocking and electron-transport layer. Thus, the structural quality of pentacene films plays an important role in PV performance.

Original language	English
Pages (from-to)	2407-2411
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	95
Issue number	8
DOIs	https://doi.org/10.1016/j.solmat.2011.04.014
Publication status	Published - 2011 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

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10.1016/j.solmat.2011.04.014

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title = "Efficient hybrid organic/inorganic photovoltaic cells utilizing n-type pentacene and intrinsic/p-type hydrogenated amorphous silicon",

abstract = "We demonstrate efficient hybrid inorganic/organic pin photovoltaic (PV) devices with a p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properties of the pentacene films were investigated using absorption spectroscopy, X-ray diffraction, and scanning electron microscopy. The maximum power conversion efficiency can be increased by one order with respect to the devices using different thicknesses of a pentacene layer from 0.32% at 10 nm to above 3.0% at 30 nm. Photocarriers in PVs are suggested to be mainly generated in the intrinsic a-Si:H layer. The pentacene layer is used as the exciton-blocking and electron-transport layer. Thus, the structural quality of pentacene films plays an important role in PV performance.",

author = "Chao, {Ching Hsun} and Chan, {Chien Hung} and Wu, {Fu Chiao} and Huang, {Jung Jie} and {Yang Lien}, Shui and Weng, {Ko Wei} and Cheng, {Horng Long}",

note = "Funding Information: This work was supported by the National Science Council, Taiwan , through Grants NSC99-ET-E-006-002-ET . We are grateful to the National Center for High-performance computing of Taiwan for computer time and facilities.",

year = "2011",

month = aug,

doi = "10.1016/j.solmat.2011.04.014",

language = "English",

volume = "95",

pages = "2407--2411",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

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T1 - Efficient hybrid organic/inorganic photovoltaic cells utilizing n-type pentacene and intrinsic/p-type hydrogenated amorphous silicon

AU - Chao, Ching Hsun

AU - Chan, Chien Hung

AU - Wu, Fu Chiao

AU - Huang, Jung Jie

AU - Yang Lien, Shui

AU - Weng, Ko Wei

AU - Cheng, Horng Long

N1 - Funding Information: This work was supported by the National Science Council, Taiwan , through Grants NSC99-ET-E-006-002-ET . We are grateful to the National Center for High-performance computing of Taiwan for computer time and facilities.

PY - 2011/8

Y1 - 2011/8

N2 - We demonstrate efficient hybrid inorganic/organic pin photovoltaic (PV) devices with a p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properties of the pentacene films were investigated using absorption spectroscopy, X-ray diffraction, and scanning electron microscopy. The maximum power conversion efficiency can be increased by one order with respect to the devices using different thicknesses of a pentacene layer from 0.32% at 10 nm to above 3.0% at 30 nm. Photocarriers in PVs are suggested to be mainly generated in the intrinsic a-Si:H layer. The pentacene layer is used as the exciton-blocking and electron-transport layer. Thus, the structural quality of pentacene films plays an important role in PV performance.

AB - We demonstrate efficient hybrid inorganic/organic pin photovoltaic (PV) devices with a p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properties of the pentacene films were investigated using absorption spectroscopy, X-ray diffraction, and scanning electron microscopy. The maximum power conversion efficiency can be increased by one order with respect to the devices using different thicknesses of a pentacene layer from 0.32% at 10 nm to above 3.0% at 30 nm. Photocarriers in PVs are suggested to be mainly generated in the intrinsic a-Si:H layer. The pentacene layer is used as the exciton-blocking and electron-transport layer. Thus, the structural quality of pentacene films plays an important role in PV performance.

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JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 8

ER -

Efficient hybrid organic/inorganic photovoltaic cells utilizing n-type pentacene and intrinsic/p-type hydrogenated amorphous silicon

Abstract

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