Abstract
We demonstrate efficient hybrid inorganic/organic pin photovoltaic (PV) devices with a p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properties of the pentacene films were investigated using absorption spectroscopy, X-ray diffraction, and scanning electron microscopy. The maximum power conversion efficiency can be increased by one order with respect to the devices using different thicknesses of a pentacene layer from 0.32% at 10 nm to above 3.0% at 30 nm. Photocarriers in PVs are suggested to be mainly generated in the intrinsic a-Si:H layer. The pentacene layer is used as the exciton-blocking and electron-transport layer. Thus, the structural quality of pentacene films plays an important role in PV performance.
| Original language | English |
|---|---|
| Pages (from-to) | 2407-2411 |
| Number of pages | 5 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 95 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2011 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
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Efficient hybrid organic/inorganic photovoltaic cells utilizing n-type pentacene and intrinsic/p-type hydrogenated amorphous silicon. / Chao, Ching Hsun; Chan, Chien Hung; Wu, Fu Chiao; Huang, Jung Jie; Yang Lien, Shui; Weng, Ko Wei; Cheng, Horng Long.
In: Solar Energy Materials and Solar Cells, Vol. 95, No. 8, 01.08.2011, p. 2407-2411.Research output: Contribution to journal › Article
TY - JOUR
T1 - Efficient hybrid organic/inorganic photovoltaic cells utilizing n-type pentacene and intrinsic/p-type hydrogenated amorphous silicon
AU - Chao, Ching Hsun
AU - Chan, Chien Hung
AU - Wu, Fu Chiao
AU - Huang, Jung Jie
AU - Yang Lien, Shui
AU - Weng, Ko Wei
AU - Cheng, Horng Long
PY - 2011/8/1
Y1 - 2011/8/1
N2 - We demonstrate efficient hybrid inorganic/organic pin photovoltaic (PV) devices with a p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properties of the pentacene films were investigated using absorption spectroscopy, X-ray diffraction, and scanning electron microscopy. The maximum power conversion efficiency can be increased by one order with respect to the devices using different thicknesses of a pentacene layer from 0.32% at 10 nm to above 3.0% at 30 nm. Photocarriers in PVs are suggested to be mainly generated in the intrinsic a-Si:H layer. The pentacene layer is used as the exciton-blocking and electron-transport layer. Thus, the structural quality of pentacene films plays an important role in PV performance.
AB - We demonstrate efficient hybrid inorganic/organic pin photovoltaic (PV) devices with a p-type-doped hydrogenated amorphous silicon (a-Si:H), intrinsic a-Si:H, and an organic semiconductor, pentacene. The correlation between the electrical properties of the PV devices and the morphological properties of the pentacene films were investigated using absorption spectroscopy, X-ray diffraction, and scanning electron microscopy. The maximum power conversion efficiency can be increased by one order with respect to the devices using different thicknesses of a pentacene layer from 0.32% at 10 nm to above 3.0% at 30 nm. Photocarriers in PVs are suggested to be mainly generated in the intrinsic a-Si:H layer. The pentacene layer is used as the exciton-blocking and electron-transport layer. Thus, the structural quality of pentacene films plays an important role in PV performance.
UR - http://www.scopus.com/inward/record.url?scp=79958090413&partnerID=8YFLogxK
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U2 - 10.1016/j.solmat.2011.04.014
DO - 10.1016/j.solmat.2011.04.014
M3 - Article
AN - SCOPUS:79958090413
VL - 95
SP - 2407
EP - 2411
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 8
ER -