Efficient n-type doping in epitaxial graphene through strong lateral orbital hybridization of Ti adsorbate

Jhih Wei Chen, Hao Chun Huang, Domenica Convertino, Camilla Coletti, Lo Yueh Chang, Hung Wei Shiu, Cheng Maw Cheng, Ming Fa Lin, Stefan Heun, Forest Shih Sen Chien, Yi Chun Chen, Chia Hao Chen, Chung Lin Wu

Research output: Contribution to journalLetter

1 Citation (Scopus)

Abstract

In recent years, various doping methods for epitaxial graphene have been demonstrated through atom substitution and adsorption. Here we observe by angle-resolved photoemission spectroscopy (ARPES) a coupling-induced Dirac cone renormalization when depositing small amounts of Ti onto epitaxial graphene on SiC. We obtain a remarkably high doping efficiency and a readily tunable carrier velocity simply by changing the amount of deposited Ti. First-principles theoretical calculations show that a strong lateral (non-vertical) orbital coupling leads to an efficient doping of graphene by hybridizing the 2pz orbital of graphene and the 3d orbitals of the Ti adsorbate, which attached on graphene without creating any trap/scattering states. This Ti-induced hybridization is adsorbate-specific and has major consequences for efficient doping as well as applications towards adsorbate-induced modification of carrier transport in graphene.

Original languageEnglish
Pages (from-to)300-305
Number of pages6
JournalCarbon
Volume109
DOIs
Publication statusPublished - 2016 Nov 1

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Adsorbates
Graphene
Doping (additives)
Carrier transport
Photoelectron spectroscopy
Cones
Substitution reactions
Scattering
Adsorption
Atoms

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

Chen, Jhih Wei ; Huang, Hao Chun ; Convertino, Domenica ; Coletti, Camilla ; Chang, Lo Yueh ; Shiu, Hung Wei ; Cheng, Cheng Maw ; Lin, Ming Fa ; Heun, Stefan ; Chien, Forest Shih Sen ; Chen, Yi Chun ; Chen, Chia Hao ; Wu, Chung Lin. / Efficient n-type doping in epitaxial graphene through strong lateral orbital hybridization of Ti adsorbate. In: Carbon. 2016 ; Vol. 109. pp. 300-305.
@article{02cbe5bcc75e4868b2ac756fdf081447,
title = "Efficient n-type doping in epitaxial graphene through strong lateral orbital hybridization of Ti adsorbate",
abstract = "In recent years, various doping methods for epitaxial graphene have been demonstrated through atom substitution and adsorption. Here we observe by angle-resolved photoemission spectroscopy (ARPES) a coupling-induced Dirac cone renormalization when depositing small amounts of Ti onto epitaxial graphene on SiC. We obtain a remarkably high doping efficiency and a readily tunable carrier velocity simply by changing the amount of deposited Ti. First-principles theoretical calculations show that a strong lateral (non-vertical) orbital coupling leads to an efficient doping of graphene by hybridizing the 2pz orbital of graphene and the 3d orbitals of the Ti adsorbate, which attached on graphene without creating any trap/scattering states. This Ti-induced hybridization is adsorbate-specific and has major consequences for efficient doping as well as applications towards adsorbate-induced modification of carrier transport in graphene.",
author = "Chen, {Jhih Wei} and Huang, {Hao Chun} and Domenica Convertino and Camilla Coletti and Chang, {Lo Yueh} and Shiu, {Hung Wei} and Cheng, {Cheng Maw} and Lin, {Ming Fa} and Stefan Heun and Chien, {Forest Shih Sen} and Chen, {Yi Chun} and Chen, {Chia Hao} and Wu, {Chung Lin}",
year = "2016",
month = "11",
day = "1",
doi = "10.1016/j.carbon.2016.08.006",
language = "English",
volume = "109",
pages = "300--305",
journal = "Carbon",
issn = "0008-6223",
publisher = "Elsevier Limited",

}

Chen, JW, Huang, HC, Convertino, D, Coletti, C, Chang, LY, Shiu, HW, Cheng, CM, Lin, MF, Heun, S, Chien, FSS, Chen, YC, Chen, CH & Wu, CL 2016, 'Efficient n-type doping in epitaxial graphene through strong lateral orbital hybridization of Ti adsorbate', Carbon, vol. 109, pp. 300-305. https://doi.org/10.1016/j.carbon.2016.08.006

Efficient n-type doping in epitaxial graphene through strong lateral orbital hybridization of Ti adsorbate. / Chen, Jhih Wei; Huang, Hao Chun; Convertino, Domenica; Coletti, Camilla; Chang, Lo Yueh; Shiu, Hung Wei; Cheng, Cheng Maw; Lin, Ming Fa; Heun, Stefan; Chien, Forest Shih Sen; Chen, Yi Chun; Chen, Chia Hao; Wu, Chung Lin.

In: Carbon, Vol. 109, 01.11.2016, p. 300-305.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Efficient n-type doping in epitaxial graphene through strong lateral orbital hybridization of Ti adsorbate

AU - Chen, Jhih Wei

AU - Huang, Hao Chun

AU - Convertino, Domenica

AU - Coletti, Camilla

AU - Chang, Lo Yueh

AU - Shiu, Hung Wei

AU - Cheng, Cheng Maw

AU - Lin, Ming Fa

AU - Heun, Stefan

AU - Chien, Forest Shih Sen

AU - Chen, Yi Chun

AU - Chen, Chia Hao

AU - Wu, Chung Lin

PY - 2016/11/1

Y1 - 2016/11/1

N2 - In recent years, various doping methods for epitaxial graphene have been demonstrated through atom substitution and adsorption. Here we observe by angle-resolved photoemission spectroscopy (ARPES) a coupling-induced Dirac cone renormalization when depositing small amounts of Ti onto epitaxial graphene on SiC. We obtain a remarkably high doping efficiency and a readily tunable carrier velocity simply by changing the amount of deposited Ti. First-principles theoretical calculations show that a strong lateral (non-vertical) orbital coupling leads to an efficient doping of graphene by hybridizing the 2pz orbital of graphene and the 3d orbitals of the Ti adsorbate, which attached on graphene without creating any trap/scattering states. This Ti-induced hybridization is adsorbate-specific and has major consequences for efficient doping as well as applications towards adsorbate-induced modification of carrier transport in graphene.

AB - In recent years, various doping methods for epitaxial graphene have been demonstrated through atom substitution and adsorption. Here we observe by angle-resolved photoemission spectroscopy (ARPES) a coupling-induced Dirac cone renormalization when depositing small amounts of Ti onto epitaxial graphene on SiC. We obtain a remarkably high doping efficiency and a readily tunable carrier velocity simply by changing the amount of deposited Ti. First-principles theoretical calculations show that a strong lateral (non-vertical) orbital coupling leads to an efficient doping of graphene by hybridizing the 2pz orbital of graphene and the 3d orbitals of the Ti adsorbate, which attached on graphene without creating any trap/scattering states. This Ti-induced hybridization is adsorbate-specific and has major consequences for efficient doping as well as applications towards adsorbate-induced modification of carrier transport in graphene.

UR - http://www.scopus.com/inward/record.url?scp=84982243107&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84982243107&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2016.08.006

DO - 10.1016/j.carbon.2016.08.006

M3 - Letter

AN - SCOPUS:84982243107

VL - 109

SP - 300

EP - 305

JO - Carbon

JF - Carbon

SN - 0008-6223

ER -