Efficient n-type doping in epitaxial graphene through strong lateral orbital hybridization of Ti adsorbate

Jhih Wei Chen, Hao Chun Huang, Domenica Convertino, Camilla Coletti, Lo Yueh Chang, Hung Wei Shiu, Cheng Maw Cheng, Ming Fa Lin, Stefan Heun, Forest Shih Sen Chien, Yi Chun Chen, Chia Hao Chen, Chung Lin Wu

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Abstract

In recent years, various doping methods for epitaxial graphene have been demonstrated through atom substitution and adsorption. Here we observe by angle-resolved photoemission spectroscopy (ARPES) a coupling-induced Dirac cone renormalization when depositing small amounts of Ti onto epitaxial graphene on SiC. We obtain a remarkably high doping efficiency and a readily tunable carrier velocity simply by changing the amount of deposited Ti. First-principles theoretical calculations show that a strong lateral (non-vertical) orbital coupling leads to an efficient doping of graphene by hybridizing the 2pz orbital of graphene and the 3d orbitals of the Ti adsorbate, which attached on graphene without creating any trap/scattering states. This Ti-induced hybridization is adsorbate-specific and has major consequences for efficient doping as well as applications towards adsorbate-induced modification of carrier transport in graphene.

Original languageEnglish
Pages (from-to)300-305
Number of pages6
JournalCarbon
Volume109
DOIs
Publication statusPublished - 2016 Nov 1

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

Chen, J. W., Huang, H. C., Convertino, D., Coletti, C., Chang, L. Y., Shiu, H. W., Cheng, C. M., Lin, M. F., Heun, S., Chien, F. S. S., Chen, Y. C., Chen, C. H., & Wu, C. L. (2016). Efficient n-type doping in epitaxial graphene through strong lateral orbital hybridization of Ti adsorbate. Carbon, 109, 300-305. https://doi.org/10.1016/j.carbon.2016.08.006