Electric characteristic enhancement of an AZO/Si schottky barrier diode with hydrogen plasma surface treatment and AlxOx Guard Ring Structure

Chien Yu Li, Min Yu Cheng, Mau Phon Houng, Cheng Fu Yang, Jing Liu

Research output: Contribution to journalArticle

Abstract

In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2at100 V), and a Schottky barrier height of 1.074 eV.

Original languageEnglish
Number of pages1
JournalMaterials
Volume11
Issue number1
DOIs
Publication statusPublished - 2018 Jan 8

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Schottky barrier diodes
Surface treatment
Hydrogen
Plasmas
Electric breakdown
Leakage currents
Fabrication
Atomic layer deposition
Rapid thermal annealing
Silicon
Cleaning
Diodes
Current density
Defects

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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abstract = "In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2at100 V), and a Schottky barrier height of 1.074 eV.",
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Electric characteristic enhancement of an AZO/Si schottky barrier diode with hydrogen plasma surface treatment and AlxOx Guard Ring Structure. / Li, Chien Yu; Cheng, Min Yu; Houng, Mau Phon; Yang, Cheng Fu; Liu, Jing.

In: Materials, Vol. 11, No. 1, 08.01.2018.

Research output: Contribution to journalArticle

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AU - Li, Chien Yu

AU - Cheng, Min Yu

AU - Houng, Mau Phon

AU - Yang, Cheng Fu

AU - Liu, Jing

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