Electric-field control of ferromagnetism in Mn-doped ZnO nanowires

Li Te Chang, Chiu Yen Wang, Jianshi Tang, Tianxiao Nie, Wanjun Jiang, Chia Pu Chu, Shamsul Arafin, Liang He, Manekkathodi Afsal, Lih Juann Chen, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

67 Citations (Scopus)


In this Letter, the electric-field control of ferromagnetism was demonstrated in a back-gated Mn-doped ZnO (Mn-ZnO) nanowire (NW) field-effect transistor (FET). The ZnO NWs were synthesized by a thermal evaporation method, and the Mn doping of 1 atom % was subsequently carried out in a MBE system using a gas-phase surface diffusion process. Detailed structural analysis confirmed the single crystallinity of Mn-ZnO NWs and excluded the presence of any precipitates or secondary phases. For the transistor, the field-effect mobility and n-type carrier concentration were estimated to be 0.65 cm 2/V·s and 6.82 × 1018 cm-3, respectively. The magnetic hysteresis curves measured under different temperatures (T = 10-350 K) clearly demonstrate the presence of ferromagnetism above room temperature. It suggests that the effect of quantum confinements in NWs improves Tc, and meanwhile minimizes crystalline defects. The magnetoresistace (MR) of a single Mn-ZnO NW was observed up to 50 K. Most importantly, the gate modulation of the MR ratio was up to 2.5 % at 1.9 K, which implies the electric-field control of ferromagnetism in a single Mn-ZnO NW.

Original languageEnglish
Pages (from-to)1823-1829
Number of pages7
JournalNano letters
Issue number4
Publication statusPublished - 2014 Apr 9

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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