Electric-field controllable photoluminescence in porous silicon

J. T. Lue, K. Y. Lo, S. K. Ma, C. L. Chen, C. S. Chang

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Intense photoluminescences (PL) at wavelenghts near 600 nm are observed when either the (100) or (111) surface of the electrochemically etched silicon wafers are illuminated by the 514.5 nm argon laser line. A fascinating phenomenon has been discovered indicating that the PL intensity can be suppressed exhaustively by applying an electric field parallel to the surface. The PL recovers its intensity very slowly when the bias is taken off, suggesting that the slow relaxation of the accumulate charges inside the porous silicon.

Original languageEnglish
Pages (from-to)593-596
Number of pages4
JournalSolid State Communications
Issue number9
Publication statusPublished - 1993 Jun

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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