Electric-field controllable photoluminescence in porous silicon

J. T. Lue, Kuang-Yao Lo, S. K. Ma, C. L. Chen, C. S. Chang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Intense photoluminescences (PL) at wavelenghts near 600 nm are observed when either the (100) or (111) surface of the electrochemically etched silicon wafers are illuminated by the 514.5 nm argon laser line. A fascinating phenomenon has been discovered indicating that the PL intensity can be suppressed exhaustively by applying an electric field parallel to the surface. The PL recovers its intensity very slowly when the bias is taken off, suggesting that the slow relaxation of the accumulate charges inside the porous silicon.

Original languageEnglish
Pages (from-to)593-596
Number of pages4
JournalSolid State Communications
Volume86
Issue number9
DOIs
Publication statusPublished - 1993 Jan 1

Fingerprint

Porous silicon
porous silicon
Photoluminescence
Electric fields
photoluminescence
electric fields
Argon lasers
argon lasers
Silicon wafers
wafers
silicon

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Lue, J. T. ; Lo, Kuang-Yao ; Ma, S. K. ; Chen, C. L. ; Chang, C. S. / Electric-field controllable photoluminescence in porous silicon. In: Solid State Communications. 1993 ; Vol. 86, No. 9. pp. 593-596.
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Electric-field controllable photoluminescence in porous silicon. / Lue, J. T.; Lo, Kuang-Yao; Ma, S. K.; Chen, C. L.; Chang, C. S.

In: Solid State Communications, Vol. 86, No. 9, 01.01.1993, p. 593-596.

Research output: Contribution to journalArticle

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AU - Chang, C. S.

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