Electric-field-controlled ferromagnetism in high-Curie-temperature Mn 0.05Ge0.95 quantumdots

Faxian Xiu, Yong Wang, Jiyoung Kim, Augustin Hong, Jianshi Tang, Ajey P. Jacob, Jin Zou, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

138 Citations (Scopus)


Electric-field manipulation of ferromagnetism has the potential for developing a new generation of electric devices to resolve the power consumption and variability issues in todays microelectronics industry. Among various dilute magnetic semiconductors (DMSs), group IV elements such as Si and Ge are the ideal material candidates because of their excellent compatibility with the conventional complementary metal-oxide-semiconductor (MOS) technology. Here we report, for the first time, the successful synthesis of self-assembled dilute magnetic Mn0.05Ge0.95 quantum dots with ferromagnetic order above room temperature, and the demonstration of electric-field control of ferromagnetism in MOS ferromagnetic capacitors up to 100K. We found that by applying electric fields to a MOS gate structure, the ferromagnetism of the channel layer can be effectively modulated through the change of hole concentration inside the quantum dots. Our results are fundamentally important in the understanding and to the realization of high-efficiency Ge-based spin field-effect transistors.

Original languageEnglish
Pages (from-to)337-344
Number of pages8
JournalNature Materials
Issue number4
Publication statusPublished - 2010 Apr

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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