Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives

Pedram Khalili; Kang Wang

doi:10.1109/E3S.2015.7336782

Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives

Pedram Khalili, Kang Wang

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The emergence of novel mechanisms for magnetization switching in nanostructures provides new opportunities for developing ultralow-power and high-density memory and logic circuits. Hence, while magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) has already entered the commercialization stage, there is a growing interest in new device concepts based on emerging mechanisms for magnetization control, such as spin-orbit torques, strain-mediated magnetoelectric coupling, and in particular electric-field (i.e. voltage-) controlled magnetic anisotropy (VCMA) [1]-[6].

Original language	English
Title of host publication	2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467385688
DOIs	https://doi.org/10.1109/E3S.2015.7336782
Publication status	Published - 2015 Nov 24
Event	4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Berkeley, United States Duration: 2015 Oct 1 → 2015 Oct 2

Publication series

Name	2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings

Conference

Conference	4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015
Country/Territory	United States
City	Berkeley
Period	15-10-01 → 15-10-02

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/E3S.2015.7336782

Cite this

Khalili, P., & Wang, K. (2015). Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives. In 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings Article 7336782 (2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/E3S.2015.7336782

Khalili, Pedram ; Wang, Kang. / Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA) : Recent progress and perspectives. 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings).

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abstract = "The emergence of novel mechanisms for magnetization switching in nanostructures provides new opportunities for developing ultralow-power and high-density memory and logic circuits. Hence, while magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) has already entered the commercialization stage, there is a growing interest in new device concepts based on emerging mechanisms for magnetization control, such as spin-orbit torques, strain-mediated magnetoelectric coupling, and in particular electric-field (i.e. voltage-) controlled magnetic anisotropy (VCMA) [1]-[6].",

author = "Pedram Khalili and Kang Wang",

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doi = "10.1109/E3S.2015.7336782",

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Khalili, P & Wang, K 2015, Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives. in 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings., 7336782, 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015, Berkeley, United States, 15-10-01. https://doi.org/10.1109/E3S.2015.7336782

Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives. / Khalili, Pedram; Wang, Kang.
2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. 7336782 (2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - The emergence of novel mechanisms for magnetization switching in nanostructures provides new opportunities for developing ultralow-power and high-density memory and logic circuits. Hence, while magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) has already entered the commercialization stage, there is a growing interest in new device concepts based on emerging mechanisms for magnetization control, such as spin-orbit torques, strain-mediated magnetoelectric coupling, and in particular electric-field (i.e. voltage-) controlled magnetic anisotropy (VCMA) [1]-[6].

AB - The emergence of novel mechanisms for magnetization switching in nanostructures provides new opportunities for developing ultralow-power and high-density memory and logic circuits. Hence, while magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) has already entered the commercialization stage, there is a growing interest in new device concepts based on emerging mechanisms for magnetization control, such as spin-orbit torques, strain-mediated magnetoelectric coupling, and in particular electric-field (i.e. voltage-) controlled magnetic anisotropy (VCMA) [1]-[6].

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BT - 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 1 October 2015 through 2 October 2015

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Khalili P, Wang K. Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives. In 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2015. 7336782. (2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings). doi: 10.1109/E3S.2015.7336782

Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives

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