Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives

Pedram Khalili, Kang Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The emergence of novel mechanisms for magnetization switching in nanostructures provides new opportunities for developing ultralow-power and high-density memory and logic circuits. Hence, while magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) has already entered the commercialization stage, there is a growing interest in new device concepts based on emerging mechanisms for magnetization control, such as spin-orbit torques, strain-mediated magnetoelectric coupling, and in particular electric-field (i.e. voltage-) controlled magnetic anisotropy (VCMA) [1]-[6].

Original languageEnglish
Title of host publication2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467385688
DOIs
Publication statusPublished - 2015 Nov 24
Event4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Berkeley, United States
Duration: 2015 Oct 12015 Oct 2

Publication series

Name2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings

Conference

Conference4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015
CountryUnited States
CityBerkeley
Period15-10-0115-10-02

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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