TY - GEN
T1 - Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA)
T2 - 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015
AU - Khalili, Pedram
AU - Wang, Kang
N1 - Publisher Copyright:
© 2015 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2015/11/24
Y1 - 2015/11/24
N2 - The emergence of novel mechanisms for magnetization switching in nanostructures provides new opportunities for developing ultralow-power and high-density memory and logic circuits. Hence, while magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) has already entered the commercialization stage, there is a growing interest in new device concepts based on emerging mechanisms for magnetization control, such as spin-orbit torques, strain-mediated magnetoelectric coupling, and in particular electric-field (i.e. voltage-) controlled magnetic anisotropy (VCMA) [1]-[6].
AB - The emergence of novel mechanisms for magnetization switching in nanostructures provides new opportunities for developing ultralow-power and high-density memory and logic circuits. Hence, while magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) has already entered the commercialization stage, there is a growing interest in new device concepts based on emerging mechanisms for magnetization control, such as spin-orbit torques, strain-mediated magnetoelectric coupling, and in particular electric-field (i.e. voltage-) controlled magnetic anisotropy (VCMA) [1]-[6].
UR - http://www.scopus.com/inward/record.url?scp=84962069903&partnerID=8YFLogxK
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U2 - 10.1109/E3S.2015.7336782
DO - 10.1109/E3S.2015.7336782
M3 - Conference contribution
AN - SCOPUS:84962069903
T3 - 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings
BT - 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 1 October 2015 through 2 October 2015
ER -