Electric-field-controlled MRAM using voltage control of magnetic anisotropy: Progress, scaling, and challenges

P. Khalili; K. L. Wang

doi:10.1109/INTMAG.2015.7157429

Electric-field-controlled MRAM using voltage control of magnetic anisotropy: Progress, scaling, and challenges

P. Khalili, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Magnetic Random Access Memory based on the Spin Transfer Torque effect (STT-MRAM) is entering the initial commercialization stage, with increasing chip capacities and manufacturing volumes. At the same time, novel mechanisms such as voltage control and spin-orbit torques for switching and control of magnetization are of increasing importance and interest. This search for new device concepts is driven primarily by considerations of energy efficiency, bit density, and scalability.

Original language	English
Title of host publication	2015 IEEE International Magnetics Conference, INTERMAG 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479973224
DOIs	https://doi.org/10.1109/INTMAG.2015.7157429
Publication status	Published - 2015 Jul 14
Event	2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China Duration: 2015 May 11 → 2015 May 15

Publication series

Name	2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other	2015 IEEE International Magnetics Conference, INTERMAG 2015
Country/Territory	China
City	Beijing
Period	15-05-11 → 15-05-15

All Science Journal Classification (ASJC) codes

Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/INTMAG.2015.7157429

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Khalili, P., & Wang, K. L. (2015). Electric-field-controlled MRAM using voltage control of magnetic anisotropy: Progress, scaling, and challenges. In 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7157429] (2015 IEEE International Magnetics Conference, INTERMAG 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7157429

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title = "Electric-field-controlled MRAM using voltage control of magnetic anisotropy: Progress, scaling, and challenges",

abstract = "Magnetic Random Access Memory based on the Spin Transfer Torque effect (STT-MRAM) is entering the initial commercialization stage, with increasing chip capacities and manufacturing volumes. At the same time, novel mechanisms such as voltage control and spin-orbit torques for switching and control of magnetization are of increasing importance and interest. This search for new device concepts is driven primarily by considerations of energy efficiency, bit density, and scalability.",

author = "P. Khalili and Wang, {K. L.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.; 2015 IEEE International Magnetics Conference, INTERMAG 2015 ; Conference date: 11-05-2015 Through 15-05-2015",

year = "2015",

month = jul,

day = "14",

doi = "10.1109/INTMAG.2015.7157429",

language = "English",

series = "2015 IEEE International Magnetics Conference, INTERMAG 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE International Magnetics Conference, INTERMAG 2015",

address = "United States",

}

Khalili, P & Wang, KL 2015, Electric-field-controlled MRAM using voltage control of magnetic anisotropy: Progress, scaling, and challenges. in 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7157429, 2015 IEEE International Magnetics Conference, INTERMAG 2015, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, China, 15-05-11. https://doi.org/10.1109/INTMAG.2015.7157429

Electric-field-controlled MRAM using voltage control of magnetic anisotropy : Progress, scaling, and challenges. / Khalili, P.; Wang, K. L.

2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7157429 (2015 IEEE International Magnetics Conference, INTERMAG 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

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N2 - Magnetic Random Access Memory based on the Spin Transfer Torque effect (STT-MRAM) is entering the initial commercialization stage, with increasing chip capacities and manufacturing volumes. At the same time, novel mechanisms such as voltage control and spin-orbit torques for switching and control of magnetization are of increasing importance and interest. This search for new device concepts is driven primarily by considerations of energy efficiency, bit density, and scalability.

AB - Magnetic Random Access Memory based on the Spin Transfer Torque effect (STT-MRAM) is entering the initial commercialization stage, with increasing chip capacities and manufacturing volumes. At the same time, novel mechanisms such as voltage control and spin-orbit torques for switching and control of magnetization are of increasing importance and interest. This search for new device concepts is driven primarily by considerations of energy efficiency, bit density, and scalability.

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BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 11 May 2015 through 15 May 2015

ER -

Khalili P, Wang KL. Electric-field-controlled MRAM using voltage control of magnetic anisotropy: Progress, scaling, and challenges. In 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7157429. (2015 IEEE International Magnetics Conference, INTERMAG 2015). https://doi.org/10.1109/INTMAG.2015.7157429

Electric-field-controlled MRAM using voltage control of magnetic anisotropy: Progress, scaling, and challenges

Abstract

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All Science Journal Classification (ASJC) codes

UN SDGs

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