Electric-field-controlled MRAM using voltage control of magnetic anisotropy: Progress, scaling, and challenges

P. Khalili, K. L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Magnetic Random Access Memory based on the Spin Transfer Torque effect (STT-MRAM) is entering the initial commercialization stage, with increasing chip capacities and manufacturing volumes. At the same time, novel mechanisms such as voltage control and spin-orbit torques for switching and control of magnetization are of increasing importance and interest. This search for new device concepts is driven primarily by considerations of energy efficiency, bit density, and scalability.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
Publication statusPublished - 2015 Jul 14
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: 2015 May 112015 May 15

Publication series

Name2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
CountryChina
CityBeijing
Period15-05-1115-05-15

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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