TY - GEN
T1 - Electric-field-controlled MRAM using voltage control of magnetic anisotropy
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
AU - Khalili, P.
AU - Wang, K. L.
N1 - Publisher Copyright:
© 2015 IEEE.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - Magnetic Random Access Memory based on the Spin Transfer Torque effect (STT-MRAM) is entering the initial commercialization stage, with increasing chip capacities and manufacturing volumes. At the same time, novel mechanisms such as voltage control and spin-orbit torques for switching and control of magnetization are of increasing importance and interest. This search for new device concepts is driven primarily by considerations of energy efficiency, bit density, and scalability.
AB - Magnetic Random Access Memory based on the Spin Transfer Torque effect (STT-MRAM) is entering the initial commercialization stage, with increasing chip capacities and manufacturing volumes. At the same time, novel mechanisms such as voltage control and spin-orbit torques for switching and control of magnetization are of increasing importance and interest. This search for new device concepts is driven primarily by considerations of energy efficiency, bit density, and scalability.
UR - http://www.scopus.com/inward/record.url?scp=84942474156&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84942474156&partnerID=8YFLogxK
U2 - 10.1109/INTMAG.2015.7157429
DO - 10.1109/INTMAG.2015.7157429
M3 - Conference contribution
AN - SCOPUS:84942474156
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 11 May 2015 through 15 May 2015
ER -