Electric field measuring by phase selective photoreflectance

J. S. Hwang, Wei-Yang Chou, Shing-Long Tyan, Y. C. Wang, H. Shen

Research output: Contribution to journalConference article

Abstract

The built-in electric fields in a MBE grown δ-doped GaAs homojunction have been investigated by the techniques of photoreflectance and phase suppression. Two Franz-Keldysh oscillation features originating from two different fields in the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase of the lock-in amplifier, one of the features can be suppressed, thus enabling us to determine the electric fields from two different regions. We have demonstrated that only two PR spectra, in-phase and out-phase components, are needed to find the phase angle which suppresses one of the features. The electric field in the top layer is 3.5 ± 0.2 × 105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2 ± 0.1 × 104 V/cm, which suggests the existence of interface states at the buffer/substrate interface.

Original languageEnglish
Pages (from-to)275-280
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume421
Publication statusPublished - 1996 Dec 1
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

Fingerprint

Electric fields
electric fields
buffers
homojunctions
Interface states
Buffer layers
Molecular beam epitaxy
Buffers
phase shift
amplifiers
retarding
oscillations
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Electric field measuring by phase selective photoreflectance",
abstract = "The built-in electric fields in a MBE grown δ-doped GaAs homojunction have been investigated by the techniques of photoreflectance and phase suppression. Two Franz-Keldysh oscillation features originating from two different fields in the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase of the lock-in amplifier, one of the features can be suppressed, thus enabling us to determine the electric fields from two different regions. We have demonstrated that only two PR spectra, in-phase and out-phase components, are needed to find the phase angle which suppresses one of the features. The electric field in the top layer is 3.5 ± 0.2 × 105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2 ± 0.1 × 104 V/cm, which suggests the existence of interface states at the buffer/substrate interface.",
author = "Hwang, {J. S.} and Wei-Yang Chou and Shing-Long Tyan and Wang, {Y. C.} and H. Shen",
year = "1996",
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Electric field measuring by phase selective photoreflectance. / Hwang, J. S.; Chou, Wei-Yang; Tyan, Shing-Long; Wang, Y. C.; Shen, H.

In: Materials Research Society Symposium - Proceedings, Vol. 421, 01.12.1996, p. 275-280.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Electric field measuring by phase selective photoreflectance

AU - Hwang, J. S.

AU - Chou, Wei-Yang

AU - Tyan, Shing-Long

AU - Wang, Y. C.

AU - Shen, H.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - The built-in electric fields in a MBE grown δ-doped GaAs homojunction have been investigated by the techniques of photoreflectance and phase suppression. Two Franz-Keldysh oscillation features originating from two different fields in the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase of the lock-in amplifier, one of the features can be suppressed, thus enabling us to determine the electric fields from two different regions. We have demonstrated that only two PR spectra, in-phase and out-phase components, are needed to find the phase angle which suppresses one of the features. The electric field in the top layer is 3.5 ± 0.2 × 105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2 ± 0.1 × 104 V/cm, which suggests the existence of interface states at the buffer/substrate interface.

AB - The built-in electric fields in a MBE grown δ-doped GaAs homojunction have been investigated by the techniques of photoreflectance and phase suppression. Two Franz-Keldysh oscillation features originating from two different fields in the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase of the lock-in amplifier, one of the features can be suppressed, thus enabling us to determine the electric fields from two different regions. We have demonstrated that only two PR spectra, in-phase and out-phase components, are needed to find the phase angle which suppresses one of the features. The electric field in the top layer is 3.5 ± 0.2 × 105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2 ± 0.1 × 104 V/cm, which suggests the existence of interface states at the buffer/substrate interface.

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