Electrical and magnetic properties of La0.5Sr0.5CoO3 thin films

G. P. Luo; Y. S. Wang; S. Y. Chen; A. K. Heilman; C. L. Chen; C. W. Chu; Y. Liou; N. B. Ming

doi:10.1063/1.126208

Electrical and magnetic properties of La_0.5Sr_0.5CoO₃ thin films

G. P. Luo, Y. S. Wang, S. Y. Chen, A. K. Heilman, C. L. Chen, C. W. Chu, Y. Liou, N. B. Ming

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Abstract

Highly conductive perovskite La_0.5Sr_0.5CoO₃ thin films were grown on (012) LaAlO₃ by pulsed-laser deposition at different substrate temperatures. Magnetoresistance (MR) measurements show only a negative effect for the films grown at a temperature of 800°C. However, a positive MR effect was found for the films grown at lower temperatures of 400 and 500°C. The sign of the magnetoresistance changed from positive to negative near 150 K under an applied magnetic field of 5.0 T, and the largest positive MR of 2.6% was obtained at a temperature of 4.2 K for the film grown at 500°C. Low-temperature magnetic hysteresis of the films was also studied, and it is suggested that the scattering of the carrier at the domain boundary may lead to the positive-MR effect.

Original language	English
Pages (from-to)	1908-1910
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	14
DOIs	https://doi.org/10.1063/1.126208
Publication status	Published - 2000 Apr 3

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.126208

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@article{ce6d9612381a405893a34b73acbd1f25,

title = "Electrical and magnetic properties of La0.5Sr0.5CoO3 thin films",

abstract = "Highly conductive perovskite La0.5Sr0.5CoO3 thin films were grown on (012) LaAlO3 by pulsed-laser deposition at different substrate temperatures. Magnetoresistance (MR) measurements show only a negative effect for the films grown at a temperature of 800°C. However, a positive MR effect was found for the films grown at lower temperatures of 400 and 500°C. The sign of the magnetoresistance changed from positive to negative near 150 K under an applied magnetic field of 5.0 T, and the largest positive MR of 2.6% was obtained at a temperature of 4.2 K for the film grown at 500°C. Low-temperature magnetic hysteresis of the films was also studied, and it is suggested that the scattering of the carrier at the domain boundary may lead to the positive-MR effect.",

author = "Luo, {G. P.} and Wang, {Y. S.} and Chen, {S. Y.} and Heilman, {A. K.} and Chen, {C. L.} and Chu, {C. W.} and Y. Liou and Ming, {N. B.}",

year = "2000",

month = apr,

day = "3",

doi = "10.1063/1.126208",

language = "English",

volume = "76",

pages = "1908--1910",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Electrical and magnetic properties of La0.5Sr0.5CoO3 thin films

AU - Luo, G. P.

AU - Wang, Y. S.

AU - Chen, S. Y.

AU - Heilman, A. K.

AU - Chen, C. L.

AU - Chu, C. W.

AU - Liou, Y.

AU - Ming, N. B.

PY - 2000/4/3

Y1 - 2000/4/3

N2 - Highly conductive perovskite La0.5Sr0.5CoO3 thin films were grown on (012) LaAlO3 by pulsed-laser deposition at different substrate temperatures. Magnetoresistance (MR) measurements show only a negative effect for the films grown at a temperature of 800°C. However, a positive MR effect was found for the films grown at lower temperatures of 400 and 500°C. The sign of the magnetoresistance changed from positive to negative near 150 K under an applied magnetic field of 5.0 T, and the largest positive MR of 2.6% was obtained at a temperature of 4.2 K for the film grown at 500°C. Low-temperature magnetic hysteresis of the films was also studied, and it is suggested that the scattering of the carrier at the domain boundary may lead to the positive-MR effect.

AB - Highly conductive perovskite La0.5Sr0.5CoO3 thin films were grown on (012) LaAlO3 by pulsed-laser deposition at different substrate temperatures. Magnetoresistance (MR) measurements show only a negative effect for the films grown at a temperature of 800°C. However, a positive MR effect was found for the films grown at lower temperatures of 400 and 500°C. The sign of the magnetoresistance changed from positive to negative near 150 K under an applied magnetic field of 5.0 T, and the largest positive MR of 2.6% was obtained at a temperature of 4.2 K for the film grown at 500°C. Low-temperature magnetic hysteresis of the films was also studied, and it is suggested that the scattering of the carrier at the domain boundary may lead to the positive-MR effect.

UR - http://www.scopus.com/inward/record.url?scp=0000660640&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000660640&partnerID=8YFLogxK

U2 - 10.1063/1.126208

DO - 10.1063/1.126208

M3 - Article

AN - SCOPUS:0000660640

SN - 0003-6951

VL - 76

SP - 1908

EP - 1910

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Electrical and magnetic properties of La_0.5Sr_0.5CoO₃ thin films

Abstract

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