Electrical and optical characteristics of UV photodetector with interlaced ZnO nanowires

Sheng Po Chang, Chien Yuan Lu, Shoou Jinn Chang, Yu Zung Chiou, Ting Jen Hsueh, Cheng Liang Hsu

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

A zinc oxide (ZnO) nanowire (NW) photodetector was fabricated with a simple method by bridging the gap of interdigitated gallium-doped ZnO pattern deposited on a silicon oxide ( SiO2) thin film with interlaced ZnO NWs. With an incident wavelength of 375 nm, it was found that measured responsivity was 0.055A/W for the interlaced ZnO NWs photodetector with a 1 V applied bias. The transient time constants measured during the turn-on and turn-off states were τON = 12.72 ms and τOFF=447. 66 ms, respectively. Furthermore, the low-frequency noise spectra obtained from the ultraviolet photodetector were purely due to the f noise. Besides, the noise equivalent power and normalized detectivity (D) of the ZnO NW photodetector were 2.32 ×10-9W and 7.43 ×109cm cdotHz0.5W-1, respectively.

Original languageEnglish
Article number5458070
Pages (from-to)990-995
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume17
Issue number4
DOIs
Publication statusPublished - 2011 Jul 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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