Electrical and optical characteristics of UV photodetector with interlaced ZnO nanowires

Sheng Po Chang; Chien Yuan Lu; Shoou Jinn Chang; Yu Zung Chiou; Ting Jen Hsueh; Cheng Liang Hsu

doi:10.1109/JSTQE.2010.2046884

Electrical and optical characteristics of UV photodetector with interlaced ZnO nanowires

Sheng Po Chang, Chien Yuan Lu, Shoou Jinn Chang, Yu Zung Chiou, Ting Jen Hsueh, Cheng Liang Hsu

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

A zinc oxide (ZnO) nanowire (NW) photodetector was fabricated with a simple method by bridging the gap of interdigitated gallium-doped ZnO pattern deposited on a silicon oxide ( SiO₂) thin film with interlaced ZnO NWs. With an incident wavelength of 375 nm, it was found that measured responsivity was 0.055A/W for the interlaced ZnO NWs photodetector with a 1 V applied bias. The transient time constants measured during the turn-on and turn-off states were τ_ON = 12.72 ms and τ_OFF=447. 66 ms, respectively. Furthermore, the low-frequency noise spectra obtained from the ultraviolet photodetector were purely due to the f noise. Besides, the noise equivalent power and normalized detectivity (D) of the ZnO NW photodetector were 2.32 ×10^-9W and 7.43 ×10⁹cm _cdotHz0.5W^-1, respectively.

Original language	English
Article number	5458070
Pages (from-to)	990-995
Number of pages	6
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	17
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2010.2046884
Publication status	Published - 2011 Jul

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Electrical and optical characteristics of UV photodetector with interlaced ZnO nanowires",

abstract = "A zinc oxide (ZnO) nanowire (NW) photodetector was fabricated with a simple method by bridging the gap of interdigitated gallium-doped ZnO pattern deposited on a silicon oxide ( SiO2) thin film with interlaced ZnO NWs. With an incident wavelength of 375 nm, it was found that measured responsivity was 0.055A/W for the interlaced ZnO NWs photodetector with a 1 V applied bias. The transient time constants measured during the turn-on and turn-off states were τON = 12.72 ms and τOFF=447. 66 ms, respectively. Furthermore, the low-frequency noise spectra obtained from the ultraviolet photodetector were purely due to the f noise. Besides, the noise equivalent power and normalized detectivity (D) of the ZnO NW photodetector were 2.32 ×10-9W and 7.43 ×109cm cdotHz0.5W-1, respectively.",

author = "Chang, {Sheng Po} and Lu, {Chien Yuan} and Chang, {Shoou Jinn} and Chiou, {Yu Zung} and Hsueh, {Ting Jen} and Hsu, {Cheng Liang}",

note = "Funding Information: Manuscript received January 12, 2010; revised March 3, 2010 and March 16, 2010; accepted March 22, 2010. Date of publication May 3, 2010; date of current version August 5, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan.",

year = "2011",

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doi = "10.1109/JSTQE.2010.2046884",

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T1 - Electrical and optical characteristics of UV photodetector with interlaced ZnO nanowires

AU - Chang, Sheng Po

AU - Lu, Chien Yuan

AU - Chang, Shoou Jinn

AU - Chiou, Yu Zung

AU - Hsueh, Ting Jen

AU - Hsu, Cheng Liang

N1 - Funding Information: Manuscript received January 12, 2010; revised March 3, 2010 and March 16, 2010; accepted March 22, 2010. Date of publication May 3, 2010; date of current version August 5, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan.

PY - 2011/7

Y1 - 2011/7

N2 - A zinc oxide (ZnO) nanowire (NW) photodetector was fabricated with a simple method by bridging the gap of interdigitated gallium-doped ZnO pattern deposited on a silicon oxide ( SiO2) thin film with interlaced ZnO NWs. With an incident wavelength of 375 nm, it was found that measured responsivity was 0.055A/W for the interlaced ZnO NWs photodetector with a 1 V applied bias. The transient time constants measured during the turn-on and turn-off states were τON = 12.72 ms and τOFF=447. 66 ms, respectively. Furthermore, the low-frequency noise spectra obtained from the ultraviolet photodetector were purely due to the f noise. Besides, the noise equivalent power and normalized detectivity (D) of the ZnO NW photodetector were 2.32 ×10-9W and 7.43 ×109cm cdotHz0.5W-1, respectively.

AB - A zinc oxide (ZnO) nanowire (NW) photodetector was fabricated with a simple method by bridging the gap of interdigitated gallium-doped ZnO pattern deposited on a silicon oxide ( SiO2) thin film with interlaced ZnO NWs. With an incident wavelength of 375 nm, it was found that measured responsivity was 0.055A/W for the interlaced ZnO NWs photodetector with a 1 V applied bias. The transient time constants measured during the turn-on and turn-off states were τON = 12.72 ms and τOFF=447. 66 ms, respectively. Furthermore, the low-frequency noise spectra obtained from the ultraviolet photodetector were purely due to the f noise. Besides, the noise equivalent power and normalized detectivity (D) of the ZnO NW photodetector were 2.32 ×10-9W and 7.43 ×109cm cdotHz0.5W-1, respectively.

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Electrical and optical characteristics of UV photodetector with interlaced ZnO nanowires

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