Electrical and optical characteristics of UV photodetector with interlaced ZnO nanowires

Sheng Po Chang, Chien Yuan Lu, Shoou Jinn Chang, Yu Zung Chiou, Ting Jen Hsueh, Cheng Liang Hsu

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42 Citations (Scopus)


A zinc oxide (ZnO) nanowire (NW) photodetector was fabricated with a simple method by bridging the gap of interdigitated gallium-doped ZnO pattern deposited on a silicon oxide ( SiO2) thin film with interlaced ZnO NWs. With an incident wavelength of 375 nm, it was found that measured responsivity was 0.055A/W for the interlaced ZnO NWs photodetector with a 1 V applied bias. The transient time constants measured during the turn-on and turn-off states were τON = 12.72 ms and τOFF=447. 66 ms, respectively. Furthermore, the low-frequency noise spectra obtained from the ultraviolet photodetector were purely due to the f noise. Besides, the noise equivalent power and normalized detectivity (D) of the ZnO NW photodetector were 2.32 ×10-9W and 7.43 ×109cm cdotHz0.5W-1, respectively.

Original languageEnglish
Article number5458070
Pages (from-to)990-995
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number4
Publication statusPublished - 2011 Jul

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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