Electrical and optical properties of a PtSn4 single crystal

V. V. Marchenkov, A. N. Domozhirova, A. A. Semiannikova, A. A. Makhnev, E. I. Shreder, S. V. Naumov, V. V. Chistyakov, E. I. Patrakov, Yu A. Perevozchikova, E. B. Marchenkova, Jung-Chun Huang, M. Eisterer

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

A topological semimetal PtSn4 single crystal was grown by method of crystallization from a solution in a melt. Then the electrical resistivity and galvanomagnetic properties (magnetoresistivity and the Hall effect) were studied in the temperature range from 4.2 to 80 K and in magnetic fields up to 100 kOe. The optical measurements were carried out at room temperature. The residual resistivity is shown to be low enough and amount to ∼ 0.5 μOhm•cm. The temperature dependence of the electrical resistivity has a metallic type, increasing monotonically with temperature. A sufficiently large magnetoresistance of 750% is observed. The majority carriers are supposed to be holes with a concentration of ∼ 6.8•1021 cm-3 and mobility of ∼ 1950 cm2/Vs at T = 4.2 K as a result of the Hall effect studies. The optical properties of PtSn4 have features characteristic of "bad" metals.

Original languageEnglish
Article number012037
JournalJournal of Physics: Conference Series
Volume1199
Issue number1
DOIs
Publication statusPublished - 2019 Apr 17
Event20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg, Russian Federation
Duration: 2018 Nov 262018 Nov 30

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electrical properties
optical properties
electrical resistivity
Hall effect
single crystals
magnetoresistivity
majority carriers
metalloids
optical measurement
crystallization
temperature dependence
temperature
room temperature
magnetic fields
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Marchenkov, V. V., Domozhirova, A. N., Semiannikova, A. A., Makhnev, A. A., Shreder, E. I., Naumov, S. V., ... Eisterer, M. (2019). Electrical and optical properties of a PtSn4 single crystal. Journal of Physics: Conference Series, 1199(1), [012037]. https://doi.org/10.1088/1742-6596/1199/1/012037
Marchenkov, V. V. ; Domozhirova, A. N. ; Semiannikova, A. A. ; Makhnev, A. A. ; Shreder, E. I. ; Naumov, S. V. ; Chistyakov, V. V. ; Patrakov, E. I. ; Perevozchikova, Yu A. ; Marchenkova, E. B. ; Huang, Jung-Chun ; Eisterer, M. / Electrical and optical properties of a PtSn4 single crystal. In: Journal of Physics: Conference Series. 2019 ; Vol. 1199, No. 1.
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abstract = "A topological semimetal PtSn4 single crystal was grown by method of crystallization from a solution in a melt. Then the electrical resistivity and galvanomagnetic properties (magnetoresistivity and the Hall effect) were studied in the temperature range from 4.2 to 80 K and in magnetic fields up to 100 kOe. The optical measurements were carried out at room temperature. The residual resistivity is shown to be low enough and amount to ∼ 0.5 μOhm•cm. The temperature dependence of the electrical resistivity has a metallic type, increasing monotonically with temperature. A sufficiently large magnetoresistance of 750{\%} is observed. The majority carriers are supposed to be holes with a concentration of ∼ 6.8•1021 cm-3 and mobility of ∼ 1950 cm2/Vs at T = 4.2 K as a result of the Hall effect studies. The optical properties of PtSn4 have features characteristic of {"}bad{"} metals.",
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Marchenkov, VV, Domozhirova, AN, Semiannikova, AA, Makhnev, AA, Shreder, EI, Naumov, SV, Chistyakov, VV, Patrakov, EI, Perevozchikova, YA, Marchenkova, EB, Huang, J-C & Eisterer, M 2019, 'Electrical and optical properties of a PtSn4 single crystal', Journal of Physics: Conference Series, vol. 1199, no. 1, 012037. https://doi.org/10.1088/1742-6596/1199/1/012037

Electrical and optical properties of a PtSn4 single crystal. / Marchenkov, V. V.; Domozhirova, A. N.; Semiannikova, A. A.; Makhnev, A. A.; Shreder, E. I.; Naumov, S. V.; Chistyakov, V. V.; Patrakov, E. I.; Perevozchikova, Yu A.; Marchenkova, E. B.; Huang, Jung-Chun; Eisterer, M.

In: Journal of Physics: Conference Series, Vol. 1199, No. 1, 012037, 17.04.2019.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Electrical and optical properties of a PtSn4 single crystal

AU - Marchenkov, V. V.

AU - Domozhirova, A. N.

AU - Semiannikova, A. A.

AU - Makhnev, A. A.

AU - Shreder, E. I.

AU - Naumov, S. V.

AU - Chistyakov, V. V.

AU - Patrakov, E. I.

AU - Perevozchikova, Yu A.

AU - Marchenkova, E. B.

AU - Huang, Jung-Chun

AU - Eisterer, M.

PY - 2019/4/17

Y1 - 2019/4/17

N2 - A topological semimetal PtSn4 single crystal was grown by method of crystallization from a solution in a melt. Then the electrical resistivity and galvanomagnetic properties (magnetoresistivity and the Hall effect) were studied in the temperature range from 4.2 to 80 K and in magnetic fields up to 100 kOe. The optical measurements were carried out at room temperature. The residual resistivity is shown to be low enough and amount to ∼ 0.5 μOhm•cm. The temperature dependence of the electrical resistivity has a metallic type, increasing monotonically with temperature. A sufficiently large magnetoresistance of 750% is observed. The majority carriers are supposed to be holes with a concentration of ∼ 6.8•1021 cm-3 and mobility of ∼ 1950 cm2/Vs at T = 4.2 K as a result of the Hall effect studies. The optical properties of PtSn4 have features characteristic of "bad" metals.

AB - A topological semimetal PtSn4 single crystal was grown by method of crystallization from a solution in a melt. Then the electrical resistivity and galvanomagnetic properties (magnetoresistivity and the Hall effect) were studied in the temperature range from 4.2 to 80 K and in magnetic fields up to 100 kOe. The optical measurements were carried out at room temperature. The residual resistivity is shown to be low enough and amount to ∼ 0.5 μOhm•cm. The temperature dependence of the electrical resistivity has a metallic type, increasing monotonically with temperature. A sufficiently large magnetoresistance of 750% is observed. The majority carriers are supposed to be holes with a concentration of ∼ 6.8•1021 cm-3 and mobility of ∼ 1950 cm2/Vs at T = 4.2 K as a result of the Hall effect studies. The optical properties of PtSn4 have features characteristic of "bad" metals.

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DO - 10.1088/1742-6596/1199/1/012037

M3 - Conference article

VL - 1199

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012037

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Marchenkov VV, Domozhirova AN, Semiannikova AA, Makhnev AA, Shreder EI, Naumov SV et al. Electrical and optical properties of a PtSn4 single crystal. Journal of Physics: Conference Series. 2019 Apr 17;1199(1). 012037. https://doi.org/10.1088/1742-6596/1199/1/012037