Electrical and optical properties of a PtSn4 single crystal

V. V. Marchenkov, A. N. Domozhirova, A. A. Semiannikova, A. A. Makhnev, E. I. Shreder, S. V. Naumov, V. V. Chistyakov, E. I. Patrakov, Yu A. Perevozchikova, E. B. Marchenkova, J. C.A. Huang, M. Eisterer

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

A topological semimetal PtSn4 single crystal was grown by method of crystallization from a solution in a melt. Then the electrical resistivity and galvanomagnetic properties (magnetoresistivity and the Hall effect) were studied in the temperature range from 4.2 to 80 K and in magnetic fields up to 100 kOe. The optical measurements were carried out at room temperature. The residual resistivity is shown to be low enough and amount to ∼ 0.5 μOhm•cm. The temperature dependence of the electrical resistivity has a metallic type, increasing monotonically with temperature. A sufficiently large magnetoresistance of 750% is observed. The majority carriers are supposed to be holes with a concentration of ∼ 6.8•1021 cm-3 and mobility of ∼ 1950 cm2/Vs at T = 4.2 K as a result of the Hall effect studies. The optical properties of PtSn4 have features characteristic of "bad" metals.

Original languageEnglish
Article number012037
JournalJournal of Physics: Conference Series
Volume1199
Issue number1
DOIs
Publication statusPublished - 2019 Apr 17
Event20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg, Russian Federation
Duration: 2018 Nov 262018 Nov 30

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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