Electrical and optical properties of Al:ZnO films prepared by ion-beam assisted sputtering

Sheng Wen Fu; Hui Ju Chen; Hsuan Ta Wu; Kuang Teng Hung; Chuan Feng Shih

doi:10.1016/j.ceramint.2015.10.067

Electrical and optical properties of Al:ZnO films prepared by ion-beam assisted sputtering

Sheng Wen Fu, Hui Ju Chen, Hsuan Ta Wu, Kuang Teng Hung, Chuan Feng Shih

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Al-doped ZnO (AZO) thin film is an important transparent and conducting electrode in optoelectronic devices. Further reduction of the resistivity and an increase in the transmittance of AZO are required. This paper proposes AZO films that are prepared using ion-beam assisted sputtering (IBAS). A low-energy Ar ion-beam with a kinetic energy between 0 and 50 eV is used. The electrical and optical properties of IBAS AZO films are studied in terms of the substrate temperature (RT-300 °C). The results show that the resistivity of AZO films decreases as the amount of chemisorbed oxygen and O-Zn bonds decrease, which increases the number of oxygen vacancies. The transmittance in the visible region is increased because of the high crystallinity of AZO films. The resistivity of IBAS AZO deposited at 300 °C with an anode voltage of 30 V is reduced to 5.6×10^-3 Ω cm because of the high carrier concentration and mobility. This shows that that ion-beam treatment changes the surface/adatom reaction during the growth of AZO films, which is similar to the effect of substrate heating. The electrical and optical properties of the AZO films that depend on the ion-beam energy and substrate temperature are discussed.

Original language	English
Pages (from-to)	2626-2633
Number of pages	8
Journal	Ceramics International
Volume	42
Issue number	2
DOIs	https://doi.org/10.1016/j.ceramint.2015.10.067
Publication status	Published - 2016 Feb 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2015.10.067

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title = "Electrical and optical properties of Al:ZnO films prepared by ion-beam assisted sputtering",

abstract = "Al-doped ZnO (AZO) thin film is an important transparent and conducting electrode in optoelectronic devices. Further reduction of the resistivity and an increase in the transmittance of AZO are required. This paper proposes AZO films that are prepared using ion-beam assisted sputtering (IBAS). A low-energy Ar ion-beam with a kinetic energy between 0 and 50 eV is used. The electrical and optical properties of IBAS AZO films are studied in terms of the substrate temperature (RT-300 °C). The results show that the resistivity of AZO films decreases as the amount of chemisorbed oxygen and O-Zn bonds decrease, which increases the number of oxygen vacancies. The transmittance in the visible region is increased because of the high crystallinity of AZO films. The resistivity of IBAS AZO deposited at 300 °C with an anode voltage of 30 V is reduced to 5.6×10-3 Ω cm because of the high carrier concentration and mobility. This shows that that ion-beam treatment changes the surface/adatom reaction during the growth of AZO films, which is similar to the effect of substrate heating. The electrical and optical properties of the AZO films that depend on the ion-beam energy and substrate temperature are discussed.",

author = "Fu, {Sheng Wen} and Chen, {Hui Ju} and Wu, {Hsuan Ta} and Hung, {Kuang Teng} and Shih, {Chuan Feng}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan, R.O.C. under contract No. MOST 102-2221-E-006 -238 -MY3. Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.",

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AU - Fu, Sheng Wen

AU - Chen, Hui Ju

AU - Wu, Hsuan Ta

AU - Hung, Kuang Teng

AU - Shih, Chuan Feng

N1 - Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan, R.O.C. under contract No. MOST 102-2221-E-006 -238 -MY3. Publisher Copyright: © 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

PY - 2016/2/1

Y1 - 2016/2/1

N2 - Al-doped ZnO (AZO) thin film is an important transparent and conducting electrode in optoelectronic devices. Further reduction of the resistivity and an increase in the transmittance of AZO are required. This paper proposes AZO films that are prepared using ion-beam assisted sputtering (IBAS). A low-energy Ar ion-beam with a kinetic energy between 0 and 50 eV is used. The electrical and optical properties of IBAS AZO films are studied in terms of the substrate temperature (RT-300 °C). The results show that the resistivity of AZO films decreases as the amount of chemisorbed oxygen and O-Zn bonds decrease, which increases the number of oxygen vacancies. The transmittance in the visible region is increased because of the high crystallinity of AZO films. The resistivity of IBAS AZO deposited at 300 °C with an anode voltage of 30 V is reduced to 5.6×10-3 Ω cm because of the high carrier concentration and mobility. This shows that that ion-beam treatment changes the surface/adatom reaction during the growth of AZO films, which is similar to the effect of substrate heating. The electrical and optical properties of the AZO films that depend on the ion-beam energy and substrate temperature are discussed.

AB - Al-doped ZnO (AZO) thin film is an important transparent and conducting electrode in optoelectronic devices. Further reduction of the resistivity and an increase in the transmittance of AZO are required. This paper proposes AZO films that are prepared using ion-beam assisted sputtering (IBAS). A low-energy Ar ion-beam with a kinetic energy between 0 and 50 eV is used. The electrical and optical properties of IBAS AZO films are studied in terms of the substrate temperature (RT-300 °C). The results show that the resistivity of AZO films decreases as the amount of chemisorbed oxygen and O-Zn bonds decrease, which increases the number of oxygen vacancies. The transmittance in the visible region is increased because of the high crystallinity of AZO films. The resistivity of IBAS AZO deposited at 300 °C with an anode voltage of 30 V is reduced to 5.6×10-3 Ω cm because of the high carrier concentration and mobility. This shows that that ion-beam treatment changes the surface/adatom reaction during the growth of AZO films, which is similar to the effect of substrate heating. The electrical and optical properties of the AZO films that depend on the ion-beam energy and substrate temperature are discussed.

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Electrical and optical properties of Al:ZnO films prepared by ion-beam assisted sputtering

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