Electrical and optical properties of GaAs/AlGaAs multiple quantum wells grown on Si substrates

Y. J. Mii; R. P.G. Karunasiri; K. L. Wang

doi:10.1063/1.100316

Electrical and optical properties of GaAs/AlGaAs multiple quantum wells grown on Si substrates

Y. J. Mii, R. P.G. Karunasiri, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Intersubband infrared absorption and sequential resonant tunneling in GaAs/AlGaAs multiple quantum wells grown on Si substrates are reported for the first time. The observed electrical and optical properties of the multiple quantum wells on Si are comparable to similar structures grown directly on GaAs substrates. This suggests the potential application of integrating the GaAs/AlGaAs multiple quantum well devices with Si very large scale integrated circuits for long-wavelength (near 10 μm) infrared detection.

Original language	English
Pages (from-to)	2050-2052
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	21
DOIs	https://doi.org/10.1063/1.100316
Publication status	Published - 1988

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.100316

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title = "Electrical and optical properties of GaAs/AlGaAs multiple quantum wells grown on Si substrates",

abstract = "Intersubband infrared absorption and sequential resonant tunneling in GaAs/AlGaAs multiple quantum wells grown on Si substrates are reported for the first time. The observed electrical and optical properties of the multiple quantum wells on Si are comparable to similar structures grown directly on GaAs substrates. This suggests the potential application of integrating the GaAs/AlGaAs multiple quantum well devices with Si very large scale integrated circuits for long-wavelength (near 10 μm) infrared detection.",

author = "Mii, {Y. J.} and Karunasiri, {R. P.G.} and Wang, {K. L.}",

year = "1988",

doi = "10.1063/1.100316",

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journal = "Applied Physics Letters",

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T1 - Electrical and optical properties of GaAs/AlGaAs multiple quantum wells grown on Si substrates

AU - Mii, Y. J.

AU - Karunasiri, R. P.G.

AU - Wang, K. L.

PY - 1988

Y1 - 1988

N2 - Intersubband infrared absorption and sequential resonant tunneling in GaAs/AlGaAs multiple quantum wells grown on Si substrates are reported for the first time. The observed electrical and optical properties of the multiple quantum wells on Si are comparable to similar structures grown directly on GaAs substrates. This suggests the potential application of integrating the GaAs/AlGaAs multiple quantum well devices with Si very large scale integrated circuits for long-wavelength (near 10 μm) infrared detection.

AB - Intersubband infrared absorption and sequential resonant tunneling in GaAs/AlGaAs multiple quantum wells grown on Si substrates are reported for the first time. The observed electrical and optical properties of the multiple quantum wells on Si are comparable to similar structures grown directly on GaAs substrates. This suggests the potential application of integrating the GaAs/AlGaAs multiple quantum well devices with Si very large scale integrated circuits for long-wavelength (near 10 μm) infrared detection.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Electrical and optical properties of GaAs/AlGaAs multiple quantum wells grown on Si substrates

Abstract

All Science Journal Classification (ASJC) codes

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