Electrical and optical properties of microwave dielectric thin films prepared by pulsed laser deposition

Y. C. Chen, H. F. Cheng, I. N. Lin

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Bi2(Zn1/3Nb2/3)2 O7, BiZN, materials possess high dielectric constant and low loss factor in microwave frequency region. They have good potential for device application, especially in the form of thin films. However, the microwave dielectric properties of a thin film are very difficult to be accurately measured. Evaluation on the dielectric behavior of the films through the performance of the microstrip line devices made of these films involves metallic conduction and stray field losses. A novel measuring technique, which can directly evaluate the microwave dielectric properties of a thin film is thus urgently needed. In this paper, BiZN thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were determined using optical transmission spectroscopy (OTS). The [100] preferentially oriented films with pyrochlore structure can be obtained for the thin films deposited at 400-600°C substrate temperature under 0.1 mbar oxygen pressure. OTS measurements reveal that the index of refraction (n=1.95-2.35) and absorption coefficient (κ=0.28 × 10-4-2.25 × 10-4 nm-1) of the films vary insignificantly with the crystallinity of the BiZN films.

Original languageEnglish
Pages (from-to)725/33-735/43
JournalIntegrated Ferroelectrics
Volume32
Issue number1-4
Publication statusPublished - 2001 Jan 1
Event12th International Symposium on Integrated Ferroelectrics - Aachen, Germany
Duration: 2000 Mar 122000 Mar 15

Fingerprint

Dielectric films
Pulsed laser deposition
pulsed laser deposition
Electric properties
Optical properties
electrical properties
Microwaves
optical properties
microwaves
Thin films
thin films
Dielectric properties
dielectric properties
Light transmission
Spectroscopy
Metallic films
Microstrip lines
Microwave frequencies
Substrates
microwave frequencies

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Electrical and optical properties of microwave dielectric thin films prepared by pulsed laser deposition",
abstract = "Bi2(Zn1/3Nb2/3)2 O7, BiZN, materials possess high dielectric constant and low loss factor in microwave frequency region. They have good potential for device application, especially in the form of thin films. However, the microwave dielectric properties of a thin film are very difficult to be accurately measured. Evaluation on the dielectric behavior of the films through the performance of the microstrip line devices made of these films involves metallic conduction and stray field losses. A novel measuring technique, which can directly evaluate the microwave dielectric properties of a thin film is thus urgently needed. In this paper, BiZN thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were determined using optical transmission spectroscopy (OTS). The [100] preferentially oriented films with pyrochlore structure can be obtained for the thin films deposited at 400-600°C substrate temperature under 0.1 mbar oxygen pressure. OTS measurements reveal that the index of refraction (n=1.95-2.35) and absorption coefficient (κ=0.28 × 10-4-2.25 × 10-4 nm-1) of the films vary insignificantly with the crystallinity of the BiZN films.",
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Electrical and optical properties of microwave dielectric thin films prepared by pulsed laser deposition. / Chen, Y. C.; Cheng, H. F.; Lin, I. N.

In: Integrated Ferroelectrics, Vol. 32, No. 1-4, 01.01.2001, p. 725/33-735/43.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Electrical and optical properties of microwave dielectric thin films prepared by pulsed laser deposition

AU - Chen, Y. C.

AU - Cheng, H. F.

AU - Lin, I. N.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Bi2(Zn1/3Nb2/3)2 O7, BiZN, materials possess high dielectric constant and low loss factor in microwave frequency region. They have good potential for device application, especially in the form of thin films. However, the microwave dielectric properties of a thin film are very difficult to be accurately measured. Evaluation on the dielectric behavior of the films through the performance of the microstrip line devices made of these films involves metallic conduction and stray field losses. A novel measuring technique, which can directly evaluate the microwave dielectric properties of a thin film is thus urgently needed. In this paper, BiZN thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were determined using optical transmission spectroscopy (OTS). The [100] preferentially oriented films with pyrochlore structure can be obtained for the thin films deposited at 400-600°C substrate temperature under 0.1 mbar oxygen pressure. OTS measurements reveal that the index of refraction (n=1.95-2.35) and absorption coefficient (κ=0.28 × 10-4-2.25 × 10-4 nm-1) of the films vary insignificantly with the crystallinity of the BiZN films.

AB - Bi2(Zn1/3Nb2/3)2 O7, BiZN, materials possess high dielectric constant and low loss factor in microwave frequency region. They have good potential for device application, especially in the form of thin films. However, the microwave dielectric properties of a thin film are very difficult to be accurately measured. Evaluation on the dielectric behavior of the films through the performance of the microstrip line devices made of these films involves metallic conduction and stray field losses. A novel measuring technique, which can directly evaluate the microwave dielectric properties of a thin film is thus urgently needed. In this paper, BiZN thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were determined using optical transmission spectroscopy (OTS). The [100] preferentially oriented films with pyrochlore structure can be obtained for the thin films deposited at 400-600°C substrate temperature under 0.1 mbar oxygen pressure. OTS measurements reveal that the index of refraction (n=1.95-2.35) and absorption coefficient (κ=0.28 × 10-4-2.25 × 10-4 nm-1) of the films vary insignificantly with the crystallinity of the BiZN films.

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