Abstract
Bi2(Zn1/3Nb2/3)2 O7, BiZN, materials possess high dielectric constant and low loss factor in microwave frequency region. They have good potential for device application, especially in the form of thin films. However, the microwave dielectric properties of a thin film are very difficult to be accurately measured. Evaluation on the dielectric behavior of the films through the performance of the microstrip line devices made of these films involves metallic conduction and stray field losses. A novel measuring technique, which can directly evaluate the microwave dielectric properties of a thin film is thus urgently needed. In this paper, BiZN thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were determined using optical transmission spectroscopy (OTS). The [100] preferentially oriented films with pyrochlore structure can be obtained for the thin films deposited at 400-600°C substrate temperature under 0.1 mbar oxygen pressure. OTS measurements reveal that the index of refraction (n=1.95-2.35) and absorption coefficient (κ=0.28 × 10-4-2.25 × 10-4 nm-1) of the films vary insignificantly with the crystallinity of the BiZN films.
| Original language | English |
|---|---|
| Pages (from-to) | 725/33-735/43 |
| Journal | Integrated Ferroelectrics |
| Volume | 32 |
| Issue number | 1-4 |
| Publication status | Published - 2001 Jan 1 |
| Event | 12th International Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: 2000 Mar 12 → 2000 Mar 15 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Electrical and optical properties of microwave dielectric thin films prepared by pulsed laser deposition. / Chen, Y. C.; Cheng, H. F.; Lin, I. N.
In: Integrated Ferroelectrics, Vol. 32, No. 1-4, 01.01.2001, p. 725/33-735/43.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Electrical and optical properties of microwave dielectric thin films prepared by pulsed laser deposition
AU - Chen, Y. C.
AU - Cheng, H. F.
AU - Lin, I. N.
PY - 2001/1/1
Y1 - 2001/1/1
N2 - Bi2(Zn1/3Nb2/3)2 O7, BiZN, materials possess high dielectric constant and low loss factor in microwave frequency region. They have good potential for device application, especially in the form of thin films. However, the microwave dielectric properties of a thin film are very difficult to be accurately measured. Evaluation on the dielectric behavior of the films through the performance of the microstrip line devices made of these films involves metallic conduction and stray field losses. A novel measuring technique, which can directly evaluate the microwave dielectric properties of a thin film is thus urgently needed. In this paper, BiZN thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were determined using optical transmission spectroscopy (OTS). The [100] preferentially oriented films with pyrochlore structure can be obtained for the thin films deposited at 400-600°C substrate temperature under 0.1 mbar oxygen pressure. OTS measurements reveal that the index of refraction (n=1.95-2.35) and absorption coefficient (κ=0.28 × 10-4-2.25 × 10-4 nm-1) of the films vary insignificantly with the crystallinity of the BiZN films.
AB - Bi2(Zn1/3Nb2/3)2 O7, BiZN, materials possess high dielectric constant and low loss factor in microwave frequency region. They have good potential for device application, especially in the form of thin films. However, the microwave dielectric properties of a thin film are very difficult to be accurately measured. Evaluation on the dielectric behavior of the films through the performance of the microstrip line devices made of these films involves metallic conduction and stray field losses. A novel measuring technique, which can directly evaluate the microwave dielectric properties of a thin film is thus urgently needed. In this paper, BiZN thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were determined using optical transmission spectroscopy (OTS). The [100] preferentially oriented films with pyrochlore structure can be obtained for the thin films deposited at 400-600°C substrate temperature under 0.1 mbar oxygen pressure. OTS measurements reveal that the index of refraction (n=1.95-2.35) and absorption coefficient (κ=0.28 × 10-4-2.25 × 10-4 nm-1) of the films vary insignificantly with the crystallinity of the BiZN films.
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M3 - Conference article
AN - SCOPUS:0035027087
VL - 32
SP - 725/33-735/43
JO - Integrated Ferroelectrics
JF - Integrated Ferroelectrics
SN - 1058-4587
IS - 1-4
ER -