Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide

C. H. Liu; S. J. Chang; J. F. Chen; J. S. Lee; S. C. Chen; U. H. Liaw

doi:10.1016/j.mseb.2003.12.005

Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide

C. H. Liu, S. J. Chang, J. F. Chen, J. S. Lee, S. C. Chen, U. H. Liaw

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The rapid thermal processing (RTP) system using in situ steam generation (ISSG) was employed to grown 30Å gate oxides in this study. Experimental results indicate that oxides grown by diluted steam rapid thermal oxidation exhibit significant reduction in gate leakage current, increase in breakdown field, current derivability and device reliability, as compared to conventional furnace-grown wet oxides. The post-annealing effects of ISSG oxide in N ₂ and nitric oxide (NO) ambient were examined. It was found that the sample with post-annealing in NO ambient shows less charge trapping, higher charge-to-breakdown, higher electron mobility and smaller device degradation under channel hot-carrier stress. This is attributed to the improvement of structural transition layer by the incorporation of nitrogen near and at Si/SiO₂ interface during NO annealing.

Original language	English
Pages (from-to)	310-316
Number of pages	7
Journal	Materials Science and Engineering: B
Volume	107
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2003.12.005
Publication status	Published - 2004 Mar 25

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2003.12.005

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@article{1a36406035314492b79c611112397f09,

title = "Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide",

abstract = "The rapid thermal processing (RTP) system using in situ steam generation (ISSG) was employed to grown 30{\AA} gate oxides in this study. Experimental results indicate that oxides grown by diluted steam rapid thermal oxidation exhibit significant reduction in gate leakage current, increase in breakdown field, current derivability and device reliability, as compared to conventional furnace-grown wet oxides. The post-annealing effects of ISSG oxide in N 2 and nitric oxide (NO) ambient were examined. It was found that the sample with post-annealing in NO ambient shows less charge trapping, higher charge-to-breakdown, higher electron mobility and smaller device degradation under channel hot-carrier stress. This is attributed to the improvement of structural transition layer by the incorporation of nitrogen near and at Si/SiO2 interface during NO annealing.",

author = "Liu, {C. H.} and Chang, {S. J.} and Chen, {J. F.} and Lee, {J. S.} and Chen, {S. C.} and Liaw, {U. H.}",

note = "Funding Information: The authors would like to thank S.M. Jang and M.C. Yu of Taiwan Semiconductor Manufacturing Company for providing experimental samples and helpful discussion. This work was partially supported by the National Science Council of ROC under contract numbers NSC-85-2215-E-006-006 and NSC-86-2622-E-005R.",

year = "2004",

month = mar,

day = "25",

doi = "10.1016/j.mseb.2003.12.005",

language = "English",

volume = "107",

pages = "310--316",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "3",

}

TY - JOUR

T1 - Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide

AU - Liu, C. H.

AU - Chang, S. J.

AU - Chen, J. F.

AU - Lee, J. S.

AU - Chen, S. C.

AU - Liaw, U. H.

N1 - Funding Information: The authors would like to thank S.M. Jang and M.C. Yu of Taiwan Semiconductor Manufacturing Company for providing experimental samples and helpful discussion. This work was partially supported by the National Science Council of ROC under contract numbers NSC-85-2215-E-006-006 and NSC-86-2622-E-005R.

PY - 2004/3/25

Y1 - 2004/3/25

N2 - The rapid thermal processing (RTP) system using in situ steam generation (ISSG) was employed to grown 30Å gate oxides in this study. Experimental results indicate that oxides grown by diluted steam rapid thermal oxidation exhibit significant reduction in gate leakage current, increase in breakdown field, current derivability and device reliability, as compared to conventional furnace-grown wet oxides. The post-annealing effects of ISSG oxide in N 2 and nitric oxide (NO) ambient were examined. It was found that the sample with post-annealing in NO ambient shows less charge trapping, higher charge-to-breakdown, higher electron mobility and smaller device degradation under channel hot-carrier stress. This is attributed to the improvement of structural transition layer by the incorporation of nitrogen near and at Si/SiO2 interface during NO annealing.

AB - The rapid thermal processing (RTP) system using in situ steam generation (ISSG) was employed to grown 30Å gate oxides in this study. Experimental results indicate that oxides grown by diluted steam rapid thermal oxidation exhibit significant reduction in gate leakage current, increase in breakdown field, current derivability and device reliability, as compared to conventional furnace-grown wet oxides. The post-annealing effects of ISSG oxide in N 2 and nitric oxide (NO) ambient were examined. It was found that the sample with post-annealing in NO ambient shows less charge trapping, higher charge-to-breakdown, higher electron mobility and smaller device degradation under channel hot-carrier stress. This is attributed to the improvement of structural transition layer by the incorporation of nitrogen near and at Si/SiO2 interface during NO annealing.

UR - http://www.scopus.com/inward/record.url?scp=1542335378&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1542335378&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2003.12.005

DO - 10.1016/j.mseb.2003.12.005

M3 - Article

AN - SCOPUS:1542335378

SN - 0921-5107

VL - 107

SP - 310

EP - 316

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 3

ER -

Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide

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