Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN

K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang, Y. Horikoshi

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7 Citations (Scopus)


Changes in electrical as well as surface composition such as chemical and electronic properties of Mg-doped p-type GaN by phosphorus implanting are systematically investigated using Hall effect and X-ray photoelectron spectroscopy (XPS) measurements. It is shown that p-type conductivity of Mg-doped GaN can be improved by implanting P atoms after a proper post-implantation annealing treatment, probably due to the reduction of self-compensation by P atoms substitution on N vacancy sites. XPS analysis is further found that the decrease of surface oxides and the shift of the surface Fermi level toward the valence band edge through P atoms introduced. These experimental results indicate that the P implantation is an effective method to improve p-type conductivity of Mg-doped GaN and reducing the surface barrier height, which can lead to a lower metal contact resistivity to p-type GaN.

Original languageEnglish
Pages (from-to)417-420
Number of pages4
JournalMicroelectronics Journal
Issue number5
Publication statusPublished - 2006 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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