Electrical bistability in hybrid ZnO nanorod/polymethylmethacrylate heterostructures

Zong Liang Tseng, Po Ching Kao, Meng Fu Shih, Hsin Hsuan Huang, Jing Yuan Wang, Sheng Yuan Chu

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60 Citations (Scopus)


A hybrid resistance switching device consisting of ZnO nanorods embedded in an insulating polymethylmethacrylate (PMMA) heterostructure sandwiched between a transparent conductive film and an Al electrode is proposed. The current-voltage characteristics of the device are discussed in terms of the formation and rupture of its conductive filaments. The hybrid device shows stable electrical bistable behaviors after more than 200 resistance-switching cycles. The hybrid ZnO nanorod/PMMA device presented in this work has potential applications in the field of bistable random access memory devices.

Original languageEnglish
Article number212103
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2010 Nov 22

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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