Electrical bistability in hybrid ZnO nanorod/polymethylmethacrylate heterostructures

Zong Liang Tseng; Po Ching Kao; Meng Fu Shih; Hsin Hsuan Huang; Jing Yuan Wang; Sheng Yuan Chu

doi:10.1063/1.3511756

Electrical bistability in hybrid ZnO nanorod/polymethylmethacrylate heterostructures

Zong Liang Tseng
, Po Ching Kao
, Meng Fu Shih
, Hsin Hsuan Huang
, Jing Yuan Wang
, Sheng Yuan Chu

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

A hybrid resistance switching device consisting of ZnO nanorods embedded in an insulating polymethylmethacrylate (PMMA) heterostructure sandwiched between a transparent conductive film and an Al electrode is proposed. The current-voltage characteristics of the device are discussed in terms of the formation and rupture of its conductive filaments. The hybrid device shows stable electrical bistable behaviors after more than 200 resistance-switching cycles. The hybrid ZnO nanorod/PMMA device presented in this work has potential applications in the field of bistable random access memory devices.

Original language	English
Article number	212103
Journal	Applied Physics Letters
Volume	97
Issue number	21
DOIs	https://doi.org/10.1063/1.3511756
Publication status	Published - 2010 Nov 22

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3511756

Cite this

@article{0327bb16327841f7a94e8ec622de0231,

title = "Electrical bistability in hybrid ZnO nanorod/polymethylmethacrylate heterostructures",

abstract = "A hybrid resistance switching device consisting of ZnO nanorods embedded in an insulating polymethylmethacrylate (PMMA) heterostructure sandwiched between a transparent conductive film and an Al electrode is proposed. The current-voltage characteristics of the device are discussed in terms of the formation and rupture of its conductive filaments. The hybrid device shows stable electrical bistable behaviors after more than 200 resistance-switching cycles. The hybrid ZnO nanorod/PMMA device presented in this work has potential applications in the field of bistable random access memory devices.",

author = "Tseng, \{Zong Liang\} and Kao, \{Po Ching\} and Shih, \{Meng Fu\} and Huang, \{Hsin Hsuan\} and Wang, \{Jing Yuan\} and Chu, \{Sheng Yuan\}",

note = "Funding Information: We would like to acknowledge the financial support provided by the National Science Council of the Republic of China under Grant No. 98-2622-E-006-044-CC3 and 98-2112-M-415-001-MY3.",

year = "2010",

month = nov,

day = "22",

doi = "10.1063/1.3511756",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "21",

}

TY - JOUR

T1 - Electrical bistability in hybrid ZnO nanorod/polymethylmethacrylate heterostructures

AU - Tseng, Zong Liang

AU - Kao, Po Ching

AU - Shih, Meng Fu

AU - Huang, Hsin Hsuan

AU - Wang, Jing Yuan

AU - Chu, Sheng Yuan

N1 - Funding Information: We would like to acknowledge the financial support provided by the National Science Council of the Republic of China under Grant No. 98-2622-E-006-044-CC3 and 98-2112-M-415-001-MY3.

PY - 2010/11/22

Y1 - 2010/11/22

N2 - A hybrid resistance switching device consisting of ZnO nanorods embedded in an insulating polymethylmethacrylate (PMMA) heterostructure sandwiched between a transparent conductive film and an Al electrode is proposed. The current-voltage characteristics of the device are discussed in terms of the formation and rupture of its conductive filaments. The hybrid device shows stable electrical bistable behaviors after more than 200 resistance-switching cycles. The hybrid ZnO nanorod/PMMA device presented in this work has potential applications in the field of bistable random access memory devices.

AB - A hybrid resistance switching device consisting of ZnO nanorods embedded in an insulating polymethylmethacrylate (PMMA) heterostructure sandwiched between a transparent conductive film and an Al electrode is proposed. The current-voltage characteristics of the device are discussed in terms of the formation and rupture of its conductive filaments. The hybrid device shows stable electrical bistable behaviors after more than 200 resistance-switching cycles. The hybrid ZnO nanorod/PMMA device presented in this work has potential applications in the field of bistable random access memory devices.

UR - https://www.scopus.com/pages/publications/78649570147

UR - https://www.scopus.com/pages/publications/78649570147#tab=citedBy

U2 - 10.1063/1.3511756

DO - 10.1063/1.3511756

M3 - Article

AN - SCOPUS:78649570147

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212103

ER -

Electrical bistability in hybrid ZnO nanorod/polymethylmethacrylate heterostructures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this