Electrical characteristics of a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor with zero potential spike at emitter-base heterojunction

Y. H. Wu, J. S. Su, Wei-Chou Hsu, W. Lin, Wen-Chau Liu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report qualitatively a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The In0.53Al0.22Ga0.25As InP heterostructure has a large valence band discontinuity and a zero conduction band discontinuity which are suitable for the HBTs. A common-emitter current gain of 85 along with a low offset voltage 50 mV are obtained. The junction ideality factors of collector and base current are 1.18 and 1.35, respectively. The current gain (hFE) slightly increases with the increase of collector current.

Original languageEnglish
Pages (from-to)1755-1757
Number of pages3
JournalSolid State Electronics
Volume38
Issue number10
DOIs
Publication statusPublished - 1995 Jan 1

Fingerprint

spike potentials
Heterojunction bipolar transistors
bipolar transistors
Heterojunctions
heterojunctions
emitters
Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
Valence bands
Conduction bands
accumulators
discontinuity
Electric potential
low voltage
metalorganic chemical vapor deposition
conduction bands
low pressure
valence

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

@article{a1707a80a443493591805cfcab3ace47,
title = "Electrical characteristics of a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor with zero potential spike at emitter-base heterojunction",
abstract = "We report qualitatively a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The In0.53Al0.22Ga0.25As InP heterostructure has a large valence band discontinuity and a zero conduction band discontinuity which are suitable for the HBTs. A common-emitter current gain of 85 along with a low offset voltage 50 mV are obtained. The junction ideality factors of collector and base current are 1.18 and 1.35, respectively. The current gain (hFE) slightly increases with the increase of collector current.",
author = "Wu, {Y. H.} and Su, {J. S.} and Wei-Chou Hsu and W. Lin and Wen-Chau Liu",
year = "1995",
month = "1",
day = "1",
doi = "10.1016/0038-1101(94)00300-5",
language = "English",
volume = "38",
pages = "1755--1757",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "10",

}

TY - JOUR

T1 - Electrical characteristics of a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor with zero potential spike at emitter-base heterojunction

AU - Wu, Y. H.

AU - Su, J. S.

AU - Hsu, Wei-Chou

AU - Lin, W.

AU - Liu, Wen-Chau

PY - 1995/1/1

Y1 - 1995/1/1

N2 - We report qualitatively a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The In0.53Al0.22Ga0.25As InP heterostructure has a large valence band discontinuity and a zero conduction band discontinuity which are suitable for the HBTs. A common-emitter current gain of 85 along with a low offset voltage 50 mV are obtained. The junction ideality factors of collector and base current are 1.18 and 1.35, respectively. The current gain (hFE) slightly increases with the increase of collector current.

AB - We report qualitatively a lattice-matched In0.53Al0.22Ga0.25As InP heterojunction bipolar transistor grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The In0.53Al0.22Ga0.25As InP heterostructure has a large valence band discontinuity and a zero conduction band discontinuity which are suitable for the HBTs. A common-emitter current gain of 85 along with a low offset voltage 50 mV are obtained. The junction ideality factors of collector and base current are 1.18 and 1.35, respectively. The current gain (hFE) slightly increases with the increase of collector current.

UR - http://www.scopus.com/inward/record.url?scp=0344053985&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344053985&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(94)00300-5

DO - 10.1016/0038-1101(94)00300-5

M3 - Article

AN - SCOPUS:0344053985

VL - 38

SP - 1755

EP - 1757

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 10

ER -