Electrical characteristics of Al2O3/InSb MOSCAPs and the effect of postdeposition annealing temperatures

Hai Dang Trinh, Yueh Chin Lin, Edward Yi Chang, Ching Ting Lee, Shin Yuan Wang, Hong Quan Nguyen, Yu Sheng Chiu, Quang Ho Luc, Hui Chen Chang, Chun Hsiung Lin, Simon Jang, Carlos H. Diaz

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Abstract

The characteristics of Al2O3/InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum treatment and oxide deposition. Multifrequency capacitance-voltage (C-V) characteristics exhibit low-frequency and asymmetrical C-V behaviors, in which capacitance in the InSb conduction band side is lower than in the valence band side. The electrical properties of the MOSCAPs are sensitive to PDA temperature and degraded significantly at PDA temperature >300 °C. This degradation is closely related to the diffusion of In, Sb into Al2O3 as indicated by transmission electron microscopy analyses.

Original languageEnglish
Pages (from-to)1555-1560
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume60
Issue number5
DOIs
Publication statusPublished - 2013 Nov 11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Trinh, H. D., Lin, Y. C., Chang, E. Y., Lee, C. T., Wang, S. Y., Nguyen, H. Q., Chiu, Y. S., Luc, Q. H., Chang, H. C., Lin, C. H., Jang, S., & Diaz, C. H. (2013). Electrical characteristics of Al2O3/InSb MOSCAPs and the effect of postdeposition annealing temperatures. IEEE Transactions on Electron Devices, 60(5), 1555-1560. https://doi.org/10.1109/TED.2013.2254119