Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers

Y. S. Lin; H. M. Shieh; W. C. Hsu; J. S. Su; J. Z. Huang; Y. H. Wu; S. D. Ho; W. Lin

doi:10.1116/1.590053

Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers

Y. S. Lin, H. M. Shieh, W. C. Hsu, J. S. Su, J. Z. Huang, Y. H. Wu, S. D. Ho, W. Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We propose an improved In_0.5Ga_0.5P/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The recombination at p-n interface can be significantly reduced at low collector current using 100 Å undoped GaAs spacers. Meanwhile, the emitter edge thinning technique is used to reduce the surface recombination current. The passivated device reveals a current gain as high as 360, along with an offset voltage as low as 80 mV. Moreover, the measured results indicate that the current gains vary slowly with temperature. In order to demonstrate that the emitter edge-thinning technique can effectively reduce the surface recombination current, the emitter size effect on current gain is also investigated.

Original language	English
Pages (from-to)	958-961
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	3
DOIs	https://doi.org/10.1116/1.590053
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.590053

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abstract = "We propose an improved In0.5Ga0.5P/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The recombination at p-n interface can be significantly reduced at low collector current using 100 {\AA} undoped GaAs spacers. Meanwhile, the emitter edge thinning technique is used to reduce the surface recombination current. The passivated device reveals a current gain as high as 360, along with an offset voltage as low as 80 mV. Moreover, the measured results indicate that the current gains vary slowly with temperature. In order to demonstrate that the emitter edge-thinning technique can effectively reduce the surface recombination current, the emitter size effect on current gain is also investigated.",

author = "Lin, {Y. S.} and Shieh, {H. M.} and Hsu, {W. C.} and Su, {J. S.} and Huang, {J. Z.} and Wu, {Y. H.} and Ho, {S. D.} and W. Lin",

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T1 - Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers

AU - Lin, Y. S.

AU - Shieh, H. M.

AU - Hsu, W. C.

AU - Su, J. S.

AU - Huang, J. Z.

AU - Wu, Y. H.

AU - Ho, S. D.

AU - Lin, W.

PY - 1998

Y1 - 1998

N2 - We propose an improved In0.5Ga0.5P/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The recombination at p-n interface can be significantly reduced at low collector current using 100 Å undoped GaAs spacers. Meanwhile, the emitter edge thinning technique is used to reduce the surface recombination current. The passivated device reveals a current gain as high as 360, along with an offset voltage as low as 80 mV. Moreover, the measured results indicate that the current gains vary slowly with temperature. In order to demonstrate that the emitter edge-thinning technique can effectively reduce the surface recombination current, the emitter size effect on current gain is also investigated.

AB - We propose an improved In0.5Ga0.5P/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The recombination at p-n interface can be significantly reduced at low collector current using 100 Å undoped GaAs spacers. Meanwhile, the emitter edge thinning technique is used to reduce the surface recombination current. The passivated device reveals a current gain as high as 360, along with an offset voltage as low as 80 mV. Moreover, the measured results indicate that the current gains vary slowly with temperature. In order to demonstrate that the emitter edge-thinning technique can effectively reduce the surface recombination current, the emitter size effect on current gain is also investigated.

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ER -

Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers

Abstract

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