TY - JOUR
T1 - Electrical characterization and comparison of CIGS solar cells made with different structures and fabrication techniques
AU - Garris, Rebekah L.
AU - Johnston, Steve
AU - Li, Jian V.
AU - Guthrey, Harvey L.
AU - Ramanathan, Kannan
AU - Mansfield, Lorelle M.
N1 - Publisher Copyright:
© 2017
PY - 2018/1
Y1 - 2018/1
N2 - In a previous paper [1], we reported on Cu(In,Ga)Se2-based (CIGS) solar cell samples collected from different research laboratories and industrial companies with the purpose of understanding the range of CIGS materials that can lead to high-quality and high-efficiency solar panels. Here, we report on electrical measurements of those same samples. Electron-beam induced current and time-resolved photoluminescence (TRPL) gave insights about the collection probability and the lifetime of carriers generated in each absorber. Capacitance and drive-level capacitance profiling revealed nonuniformity in carrier-density profiles. Admittance spectroscopy revealed small activation energies (≤ 0.03 eV) indicative of the inversion strength, larger activation energies (> 0.1 eV) reflective of thermal activation of absorber conductivity and a deeper defect level. Deep-level transient spectroscopy (DLTS) probed deep hole-trapping defects and showed that all samples in this study had a majority-carrier defect with activation energy between 0.3 eV and 0.9 eV. Optical-DLTS revealed deep electron-trapping defects in several of the CIGS samples. This work focused on revealing similarities and differences between high-quality CIGS solar cells made with various structures and fabrication techniques.
AB - In a previous paper [1], we reported on Cu(In,Ga)Se2-based (CIGS) solar cell samples collected from different research laboratories and industrial companies with the purpose of understanding the range of CIGS materials that can lead to high-quality and high-efficiency solar panels. Here, we report on electrical measurements of those same samples. Electron-beam induced current and time-resolved photoluminescence (TRPL) gave insights about the collection probability and the lifetime of carriers generated in each absorber. Capacitance and drive-level capacitance profiling revealed nonuniformity in carrier-density profiles. Admittance spectroscopy revealed small activation energies (≤ 0.03 eV) indicative of the inversion strength, larger activation energies (> 0.1 eV) reflective of thermal activation of absorber conductivity and a deeper defect level. Deep-level transient spectroscopy (DLTS) probed deep hole-trapping defects and showed that all samples in this study had a majority-carrier defect with activation energy between 0.3 eV and 0.9 eV. Optical-DLTS revealed deep electron-trapping defects in several of the CIGS samples. This work focused on revealing similarities and differences between high-quality CIGS solar cells made with various structures and fabrication techniques.
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U2 - 10.1016/j.solmat.2017.08.027
DO - 10.1016/j.solmat.2017.08.027
M3 - Article
AN - SCOPUS:85028411738
SN - 0927-0248
VL - 174
SP - 77
EP - 83
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
ER -