TY - GEN
T1 - Electrical characterization of BGA test socket for high-speed applications
AU - Chen, Ming Kun
AU - Tai, Cheng Chi
AU - Huang, Yu Jung
AU - Fang, Li Kuei
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - This paper discusses the electrical characterization of a high-density and high-speed BGA (ball grid array) socket. The socket is built from copper-clad pogo pins and pinned in a 32 x 32 mm array with 400 pins on a 1.27 mm pitch. It provides power/ground array, and signal pins designed to offer 348 signal lines. The socket-base dielectric has a dielectric constant of about 4.2. The BGA test socket discussed in the paper is being targeted for high-speed testing fixture applications and their pins are closely spaced. Extensive TDR (time domain reflectometry) measurements and IPA510 simulations have been used to extract their significant electrical properties such as differential skews, characteristic impedances, reflection characteristics, and crosstalk. The bandwidth of the BGA socket from the 3 dB return loss criteria was calculated to be around 5 GHz for time domain measurements.
AB - This paper discusses the electrical characterization of a high-density and high-speed BGA (ball grid array) socket. The socket is built from copper-clad pogo pins and pinned in a 32 x 32 mm array with 400 pins on a 1.27 mm pitch. It provides power/ground array, and signal pins designed to offer 348 signal lines. The socket-base dielectric has a dielectric constant of about 4.2. The BGA test socket discussed in the paper is being targeted for high-speed testing fixture applications and their pins are closely spaced. Extensive TDR (time domain reflectometry) measurements and IPA510 simulations have been used to extract their significant electrical properties such as differential skews, characteristic impedances, reflection characteristics, and crosstalk. The bandwidth of the BGA socket from the 3 dB return loss criteria was calculated to be around 5 GHz for time domain measurements.
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U2 - 10.1109/EMAP.2002.1188824
DO - 10.1109/EMAP.2002.1188824
M3 - Conference contribution
AN - SCOPUS:84966478694
T3 - Proceedings of the 4th International Symposium on Electronic Materials and Packaging, EMAP 2002
SP - 123
EP - 126
BT - Proceedings of the 4th International Symposium on Electronic Materials and Packaging, EMAP 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th International Symposium on Electronic Materials and Packaging, EMAP 2002
Y2 - 4 December 2002 through 6 December 2002
ER -