Electrical characterization of interface recombination and its dependence on band offset, potential barrier height, and inversion in certain heterojunction solar cells

Jian V. Li, Sachit Grover, Ingrid L. Repins, Brian M. Keyes, Miguel A. Contreras, Kannan Ramanathan, Rommel Noufi, Zhibo Zhao, Feng Liao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The open-circuit voltage VOC of a heterojunction solar cell of the generic TCO/buffer/absorber/back-contact structure is sensitively influenced by the interface recombination at the buffer/absorber front interface Ri,f and at the absorber/back-contact interface Ri,b. We describe an experimental method to separate and quantify these interface recombination rates and the bulk recombination rates from the dependencies of VOC on temperature and illumination with varying wavelength. We show that Ri,f is mainly determined by the potential barrier height φb0 at the buffer/absorber interface. We discuss strategies to increase φb0 by engineering band offset, band bending, and inversion.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages686-690
Number of pages5
ISBN (Electronic)9781479943982
DOIs
Publication statusPublished - 2014 Oct 15
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 2014 Jun 82014 Jun 13

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period14-06-0814-06-13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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