Electrical characterization of interface recombination and its dependence on band offset, potential barrier height, and inversion in certain heterojunction solar cells

Jian V. Li; Sachit Grover; Ingrid L. Repins; Brian M. Keyes; Miguel A. Contreras; Kannan Ramanathan; Rommel Noufi; Zhibo Zhao; Feng Liao

doi:10.1109/PVSC.2014.6925013

Electrical characterization of interface recombination and its dependence on band offset, potential barrier height, and inversion in certain heterojunction solar cells

Jian V. Li, Sachit Grover, Ingrid L. Repins, Brian M. Keyes, Miguel A. Contreras, Kannan Ramanathan, Rommel Noufi, Zhibo Zhao, Feng Liao

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

The open-circuit voltage V_OC of a heterojunction solar cell of the generic TCO/buffer/absorber/back-contact structure is sensitively influenced by the interface recombination at the buffer/absorber front interface R^i,f and at the absorber/back-contact interface R^i,b. We describe an experimental method to separate and quantify these interface recombination rates and the bulk recombination rates from the dependencies of V_OC on temperature and illumination with varying wavelength. We show that R^i,f is mainly determined by the potential barrier height φ_b0 at the buffer/absorber interface. We discuss strategies to increase φ_b0 by engineering band offset, band bending, and inversion.

Original language	English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	686-690
Number of pages	5
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925013
Publication status	Published - 2014 Oct 15
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 2014 Jun 8 → 2014 Jun 13

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	14-06-08 → 14-06-13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2014.6925013

Cite this

Li, J. V., Grover, S., Repins, I. L., Keyes, B. M., Contreras, M. A., Ramanathan, K., Noufi, R., Zhao, Z., & Liao, F. (2014). Electrical characterization of interface recombination and its dependence on band offset, potential barrier height, and inversion in certain heterojunction solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 686-690). Article 6925013 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925013

Li, Jian V. ; Grover, Sachit ; Repins, Ingrid L. et al. / Electrical characterization of interface recombination and its dependence on band offset, potential barrier height, and inversion in certain heterojunction solar cells. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 686-690 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

@inproceedings{bf117b4719d44601889765250f4aea43,

title = "Electrical characterization of interface recombination and its dependence on band offset, potential barrier height, and inversion in certain heterojunction solar cells",

abstract = "The open-circuit voltage VOC of a heterojunction solar cell of the generic TCO/buffer/absorber/back-contact structure is sensitively influenced by the interface recombination at the buffer/absorber front interface Ri,f and at the absorber/back-contact interface Ri,b. We describe an experimental method to separate and quantify these interface recombination rates and the bulk recombination rates from the dependencies of VOC on temperature and illumination with varying wavelength. We show that Ri,f is mainly determined by the potential barrier height φb0 at the buffer/absorber interface. We discuss strategies to increase φb0 by engineering band offset, band bending, and inversion.",

author = "Li, {Jian V.} and Sachit Grover and Repins, {Ingrid L.} and Keyes, {Brian M.} and Contreras, {Miguel A.} and Kannan Ramanathan and Rommel Noufi and Zhibo Zhao and Feng Liao",

year = "2014",

month = oct,

day = "15",

doi = "10.1109/PVSC.2014.6925013",

language = "English",

series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "686--690",

booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

address = "United States",

note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

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Li, JV, Grover, S, Repins, IL, Keyes, BM, Contreras, MA, Ramanathan, K, Noufi, R, Zhao, Z & Liao, F 2014, Electrical characterization of interface recombination and its dependence on band offset, potential barrier height, and inversion in certain heterojunction solar cells. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925013, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 686-690, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 14-06-08. https://doi.org/10.1109/PVSC.2014.6925013

Electrical characterization of interface recombination and its dependence on band offset, potential barrier height, and inversion in certain heterojunction solar cells. / Li, Jian V.; Grover, Sachit; Repins, Ingrid L. et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 686-690 6925013 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Electrical characterization of interface recombination and its dependence on band offset, potential barrier height, and inversion in certain heterojunction solar cells

AU - Li, Jian V.

AU - Grover, Sachit

AU - Repins, Ingrid L.

AU - Keyes, Brian M.

AU - Contreras, Miguel A.

AU - Ramanathan, Kannan

AU - Noufi, Rommel

AU - Zhao, Zhibo

AU - Liao, Feng

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N2 - The open-circuit voltage VOC of a heterojunction solar cell of the generic TCO/buffer/absorber/back-contact structure is sensitively influenced by the interface recombination at the buffer/absorber front interface Ri,f and at the absorber/back-contact interface Ri,b. We describe an experimental method to separate and quantify these interface recombination rates and the bulk recombination rates from the dependencies of VOC on temperature and illumination with varying wavelength. We show that Ri,f is mainly determined by the potential barrier height φb0 at the buffer/absorber interface. We discuss strategies to increase φb0 by engineering band offset, band bending, and inversion.

AB - The open-circuit voltage VOC of a heterojunction solar cell of the generic TCO/buffer/absorber/back-contact structure is sensitively influenced by the interface recombination at the buffer/absorber front interface Ri,f and at the absorber/back-contact interface Ri,b. We describe an experimental method to separate and quantify these interface recombination rates and the bulk recombination rates from the dependencies of VOC on temperature and illumination with varying wavelength. We show that Ri,f is mainly determined by the potential barrier height φb0 at the buffer/absorber interface. We discuss strategies to increase φb0 by engineering band offset, band bending, and inversion.

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Li JV, Grover S, Repins IL, Keyes BM, Contreras MA, Ramanathan K et al. Electrical characterization of interface recombination and its dependence on band offset, potential barrier height, and inversion in certain heterojunction solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 686-690. 6925013. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6925013

Electrical characterization of interface recombination and its dependence on band offset, potential barrier height, and inversion in certain heterojunction solar cells

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