Electrical characterization of resistive memory in metal-Pr 0.7Ca0.3MnO3 interface: A future non-volatile memory device

N. Das; Y. Y. Xue; Y. Q. Wang; C. W. Chu

doi:10.1109/NVMT.2009.5429779

Electrical characterization of resistive memory in metal-Pr _0.7Ca_0.3MnO₃ interface: A future non-volatile memory device

N. Das, Y. Y. Xue, Y. Q. Wang, C. W. Chu

Executive Vice President

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The phenomenon of electric pulse induced resistive switching in metal (Ag)-oxide (Pr_0.7Ca_0.3MnO₃) interface has been studied in detail. Dielectric spectroscopy (frequency range ∼10Hz-IOMz) has been used to investigate the formation of switched interface and underlying mesostructure. Resistance switch has been realized only over a voltage threshold (V_Th) and a very fast 'write' speed (∼100 ns or less) with excellent reversibility has been achieved. Detailed kinetics and relaxation studies are conducted with data retention time period of more than 10 ⁸ sec (∼years). Based on the above results, a defect creation/annihilation and lattice rearrangement model for switching has been developed. C-AFM (conductive AFM) has been used to study the nano inhomogeneity of the conductivity of metal-PCMO interface and a more complex percolation model has been outlined.

Original language	English
Title of host publication	Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009
Pages	28-47
Number of pages	20
DOIs	https://doi.org/10.1109/NVMT.2009.5429779
Publication status	Published - 2009
Event	2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009 - Portland, OR, United States Duration: 2009 Oct 25 → 2009 Oct 28

Publication series

Name	Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009

Conference

Conference	2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009
Country/Territory	United States
City	Portland, OR
Period	09-10-25 → 09-10-28

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/NVMT.2009.5429779

Cite this

Das, N., Xue, Y. Y., Wang, Y. Q., & Chu, C. W. (2009). Electrical characterization of resistive memory in metal-Pr _0.7Ca_0.3MnO₃ interface: A future non-volatile memory device. In Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009 (pp. 28-47). Article 5429779 (Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009). https://doi.org/10.1109/NVMT.2009.5429779

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title = "Electrical characterization of resistive memory in metal-Pr 0.7Ca0.3MnO3 interface: A future non-volatile memory device",

abstract = "The phenomenon of electric pulse induced resistive switching in metal (Ag)-oxide (Pr0.7Ca0.3MnO3) interface has been studied in detail. Dielectric spectroscopy (frequency range ∼10Hz-IOMz) has been used to investigate the formation of switched interface and underlying mesostructure. Resistance switch has been realized only over a voltage threshold (VTh) and a very fast 'write' speed (∼100 ns or less) with excellent reversibility has been achieved. Detailed kinetics and relaxation studies are conducted with data retention time period of more than 10 8 sec (∼years). Based on the above results, a defect creation/annihilation and lattice rearrangement model for switching has been developed. C-AFM (conductive AFM) has been used to study the nano inhomogeneity of the conductivity of metal-PCMO interface and a more complex percolation model has been outlined.",

author = "N. Das and Xue, {Y. Y.} and Wang, {Y. Q.} and Chu, {C. W.}",

year = "2009",

doi = "10.1109/NVMT.2009.5429779",

language = "English",

isbn = "9781424449545",

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Das, N, Xue, YY, Wang, YQ & Chu, CW 2009, Electrical characterization of resistive memory in metal-Pr _0.7Ca_0.3MnO₃ interface: A future non-volatile memory device. in Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009., 5429779, Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009, pp. 28-47, 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009, Portland, OR, United States, 09-10-25. https://doi.org/10.1109/NVMT.2009.5429779

Electrical characterization of resistive memory in metal-Pr _0.7Ca_0.3MnO₃ interface: A future non-volatile memory device. / Das, N.; Xue, Y. Y.; Wang, Y. Q. et al.
Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009. 2009. p. 28-47 5429779 (Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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