The phenomenon of electric pulse induced resistive switching in metal (Ag)-oxide (Pr0.7Ca0.3MnO3) interface has been studied in detail. Dielectric spectroscopy (frequency range ∼10Hz-IOMz) has been used to investigate the formation of switched interface and underlying mesostructure. Resistance switch has been realized only over a voltage threshold (VTh) and a very fast 'write' speed (∼100 ns or less) with excellent reversibility has been achieved. Detailed kinetics and relaxation studies are conducted with data retention time period of more than 10 8 sec (∼years). Based on the above results, a defect creation/annihilation and lattice rearrangement model for switching has been developed. C-AFM (conductive AFM) has been used to study the nano inhomogeneity of the conductivity of metal-PCMO interface and a more complex percolation model has been outlined.