TY - JOUR
T1 - Electrical characterization of sol-gel La2Ti2O7 films for resistive random access memory applications
AU - Li, Ming Jen
AU - Hsu, Tsung Hsien
AU - Huang, Cheng Liang
N1 - Funding Information:
This work was financially sponsored by the Ministry of Science and Technology of Taiwan under the projects MOST 111-2221-E-006-164-MY2 and MOST 110-2221-E-006-032-MY2 . The authors would like to thank Ms. Hui–Jung Shih with the Instrument Center of National Cheng Kung University for supporting the use of high-resolution SEM (Hitachi SU8000). The authors also gratefully acknowledge the use of D8 Discover equipment belonging to the Instrument Center of National Cheng Kung University .
Funding Information:
This work was financially sponsored by the Ministry of Science and Technology of Taiwan under the projects MOST 111-2221-E-006-164-MY2 and MOST 110-2221-E-006-032-MY2. The authors would like to thank Ms. Hui–Jung Shih with the Instrument Center of National Cheng Kung University for supporting the use of high-resolution SEM (Hitachi SU8000). The authors also gratefully acknowledge the use of D8 Discover equipment belonging to the Instrument Center of National Cheng Kung University.
Publisher Copyright:
© 2023 Elsevier Ltd
PY - 2023/5
Y1 - 2023/5
N2 - The bipolar resistive switching (BRS) devices were investigated for RRAM applications in a MIM structure based on sol-gel derived amorphous La2Ti2O7 (LTO) thin films. The influences on the resistive switching (RS) properties according to the film thickness, electrode, annealing temperature and post metal annealing (PMA) treatment were also discussed. Moreover, RS performance of the RRAMs is affected by the work functions of electrodes. The RS characteristics of the devices are controlled by oxygen vacancies and the content of oxygen vacancies was seriously reduced after annealing, which led to a significant decrease of the endurance. In addition, PMA treatment increased the content of oxygen vacancies attributed to the forming of AlOx interface layer and made Al ions diffuse into the films to form bridges, which improved the RS performance of the devices. Consequently, the sample with 300 °C PMA exhibits the optimized RS properties with maximum switching cycles of 2674, a Ron/Roff ratio of 102, low operating voltages (VSet/VReset = 1.32 V/−1.21 V), and a retention time of over 104 s at room temperature and 85 °C, indicating the promising potential for practical RRAM applications. Conduction mechanism of all devices with Al top electrode were described by trap-controlled space-charge limited current (SCLC) and ohmic conduction.
AB - The bipolar resistive switching (BRS) devices were investigated for RRAM applications in a MIM structure based on sol-gel derived amorphous La2Ti2O7 (LTO) thin films. The influences on the resistive switching (RS) properties according to the film thickness, electrode, annealing temperature and post metal annealing (PMA) treatment were also discussed. Moreover, RS performance of the RRAMs is affected by the work functions of electrodes. The RS characteristics of the devices are controlled by oxygen vacancies and the content of oxygen vacancies was seriously reduced after annealing, which led to a significant decrease of the endurance. In addition, PMA treatment increased the content of oxygen vacancies attributed to the forming of AlOx interface layer and made Al ions diffuse into the films to form bridges, which improved the RS performance of the devices. Consequently, the sample with 300 °C PMA exhibits the optimized RS properties with maximum switching cycles of 2674, a Ron/Roff ratio of 102, low operating voltages (VSet/VReset = 1.32 V/−1.21 V), and a retention time of over 104 s at room temperature and 85 °C, indicating the promising potential for practical RRAM applications. Conduction mechanism of all devices with Al top electrode were described by trap-controlled space-charge limited current (SCLC) and ohmic conduction.
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U2 - 10.1016/j.mssp.2023.107370
DO - 10.1016/j.mssp.2023.107370
M3 - Article
AN - SCOPUS:85149770954
SN - 1369-8001
VL - 158
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 107370
ER -