Abstract
Both solution nanowire ZnO and sputtered Al thin film on SiO 2 as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nanostructure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of ZnO wires to form aluminum doped zinc oxide (AZO)/ZnO wires. The Al doping concentration and the distance of the ZnO wire increased with increasing the electrical duration. Also, the electrical current-induced temperature was ∼ 211°C (solid-state doped process) and so could be applied to low-temperature optoelectronic devices.
| Original language | English |
|---|---|
| Article number | 208362 |
| Journal | Journal of Nanomaterials |
| Volume | 2012 |
| DOIs | |
| Publication status | Published - 2012 Jun 20 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Electrical crystallization mechanism and interface characteristics of nanowire ZnO/Al structures fabricated by the solution method. / Tseng, Yi Wei; Hung, Fei Yi; Lui, Truan Sheng; Chen, Yen Ting; Xiao, Ren Syuan; Chen, Kuan Jen.
In: Journal of Nanomaterials, Vol. 2012, 208362, 20.06.2012.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electrical crystallization mechanism and interface characteristics of nanowire ZnO/Al structures fabricated by the solution method
AU - Tseng, Yi Wei
AU - Hung, Fei Yi
AU - Lui, Truan Sheng
AU - Chen, Yen Ting
AU - Xiao, Ren Syuan
AU - Chen, Kuan Jen
PY - 2012/6/20
Y1 - 2012/6/20
N2 - Both solution nanowire ZnO and sputtered Al thin film on SiO 2 as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nanostructure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of ZnO wires to form aluminum doped zinc oxide (AZO)/ZnO wires. The Al doping concentration and the distance of the ZnO wire increased with increasing the electrical duration. Also, the electrical current-induced temperature was ∼ 211°C (solid-state doped process) and so could be applied to low-temperature optoelectronic devices.
AB - Both solution nanowire ZnO and sputtered Al thin film on SiO 2 as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nanostructure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of ZnO wires to form aluminum doped zinc oxide (AZO)/ZnO wires. The Al doping concentration and the distance of the ZnO wire increased with increasing the electrical duration. Also, the electrical current-induced temperature was ∼ 211°C (solid-state doped process) and so could be applied to low-temperature optoelectronic devices.
UR - http://www.scopus.com/inward/record.url?scp=84862275967&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862275967&partnerID=8YFLogxK
U2 - 10.1155/2012/208362
DO - 10.1155/2012/208362
M3 - Article
AN - SCOPUS:84862275967
VL - 2012
JO - Journal of Nanomaterials
JF - Journal of Nanomaterials
SN - 1687-4110
M1 - 208362
ER -