Electrical crystallization mechanism and interface characteristics of nanowire ZnO/Al structures fabricated by the solution method

Yi Wei Tseng, Fei Yi Hung, Truan Sheng Lui, Yen Ting Chen, Ren Syuan Xiao, Kuan Jen Chen

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Both solution nanowire ZnO and sputtered Al thin film on SiO 2 as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nanostructure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of ZnO wires to form aluminum doped zinc oxide (AZO)/ZnO wires. The Al doping concentration and the distance of the ZnO wire increased with increasing the electrical duration. Also, the electrical current-induced temperature was ∼ 211°C (solid-state doped process) and so could be applied to low-temperature optoelectronic devices.

Original languageEnglish
Article number208362
JournalJournal of Nanomaterials
Volume2012
DOIs
Publication statusPublished - 2012 Jun 20

Fingerprint

Crystallization
Nanowires
Wire
Zinc Oxide
Induced currents
Zinc oxide
Aluminum
Optoelectronic devices
Temperature
Nanostructures
Doping (additives)
Thin films

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

@article{1b55216822314e09bd26a19e39a4993a,
title = "Electrical crystallization mechanism and interface characteristics of nanowire ZnO/Al structures fabricated by the solution method",
abstract = "Both solution nanowire ZnO and sputtered Al thin film on SiO 2 as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nanostructure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of ZnO wires to form aluminum doped zinc oxide (AZO)/ZnO wires. The Al doping concentration and the distance of the ZnO wire increased with increasing the electrical duration. Also, the electrical current-induced temperature was ∼ 211°C (solid-state doped process) and so could be applied to low-temperature optoelectronic devices.",
author = "Tseng, {Yi Wei} and Hung, {Fei Yi} and Lui, {Truan Sheng} and Chen, {Yen Ting} and Xiao, {Ren Syuan} and Chen, {Kuan Jen}",
year = "2012",
month = "6",
day = "20",
doi = "10.1155/2012/208362",
language = "English",
volume = "2012",
journal = "Journal of Nanomaterials",
issn = "1687-4110",
publisher = "Hindawi Publishing Corporation",

}

TY - JOUR

T1 - Electrical crystallization mechanism and interface characteristics of nanowire ZnO/Al structures fabricated by the solution method

AU - Tseng, Yi Wei

AU - Hung, Fei Yi

AU - Lui, Truan Sheng

AU - Chen, Yen Ting

AU - Xiao, Ren Syuan

AU - Chen, Kuan Jen

PY - 2012/6/20

Y1 - 2012/6/20

N2 - Both solution nanowire ZnO and sputtered Al thin film on SiO 2 as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nanostructure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of ZnO wires to form aluminum doped zinc oxide (AZO)/ZnO wires. The Al doping concentration and the distance of the ZnO wire increased with increasing the electrical duration. Also, the electrical current-induced temperature was ∼ 211°C (solid-state doped process) and so could be applied to low-temperature optoelectronic devices.

AB - Both solution nanowire ZnO and sputtered Al thin film on SiO 2 as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nanostructure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of ZnO wires to form aluminum doped zinc oxide (AZO)/ZnO wires. The Al doping concentration and the distance of the ZnO wire increased with increasing the electrical duration. Also, the electrical current-induced temperature was ∼ 211°C (solid-state doped process) and so could be applied to low-temperature optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=84862275967&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862275967&partnerID=8YFLogxK

U2 - 10.1155/2012/208362

DO - 10.1155/2012/208362

M3 - Article

AN - SCOPUS:84862275967

VL - 2012

JO - Journal of Nanomaterials

JF - Journal of Nanomaterials

SN - 1687-4110

M1 - 208362

ER -