Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers

Jinn Kong Sheu; Yan Kuin Su; Shoou Jinn Chang; Gou Chung Chi; Kai Bin Lin; Chia Cheng Liu; Chien Chia Chiu

doi:10.1016/S0038-1101(98)00148-8

Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers

Jinn Kong Sheu, Yan Kuin Su, Shoou Jinn Chang, Gou Chung Chi, Kai Bin Lin, Chia Cheng Liu, Chien Chia Chiu

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this study, H⁺ ion implantation was used to form high resistive regions in an AlGaInP/ GaInP multi-quantum well (MQW) gain guided laser diode. The electrical derivative was used to characterize the properties of the fabricated laser diodes. The equivalent circuits were proposed to model the diodes for various structures. It was found that diodes fabricated with H⁺ ion implantation, have lower threshold current density and better carrier confinement characteristics.

Original language	English
Pages (from-to)	1867-1869
Number of pages	3
Journal	Solid-State Electronics
Volume	42
Issue number	10
DOIs	https://doi.org/10.1016/S0038-1101(98)00148-8
Publication status	Published - 1998 Oct 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0038-1101(98)00148-8

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title = "Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers",

abstract = "In this study, H+ ion implantation was used to form high resistive regions in an AlGaInP/ GaInP multi-quantum well (MQW) gain guided laser diode. The electrical derivative was used to characterize the properties of the fabricated laser diodes. The equivalent circuits were proposed to model the diodes for various structures. It was found that diodes fabricated with H+ ion implantation, have lower threshold current density and better carrier confinement characteristics.",

author = "Sheu, {Jinn Kong} and Su, {Yan Kuin} and Chang, {Shoou Jinn} and Chi, {Gou Chung} and Lin, {Kai Bin} and Liu, {Chia Cheng} and Chiu, {Chien Chia}",

note = "Funding Information: The work is supported by National Science Council under the contract number of NSC-86-2215-E-008-012.",

year = "1998",

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doi = "10.1016/S0038-1101(98)00148-8",

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T1 - Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers

AU - Sheu, Jinn Kong

AU - Su, Yan Kuin

AU - Chang, Shoou Jinn

AU - Chi, Gou Chung

AU - Lin, Kai Bin

AU - Liu, Chia Cheng

AU - Chiu, Chien Chia

N1 - Funding Information: The work is supported by National Science Council under the contract number of NSC-86-2215-E-008-012.

PY - 1998/10/1

Y1 - 1998/10/1

N2 - In this study, H+ ion implantation was used to form high resistive regions in an AlGaInP/ GaInP multi-quantum well (MQW) gain guided laser diode. The electrical derivative was used to characterize the properties of the fabricated laser diodes. The equivalent circuits were proposed to model the diodes for various structures. It was found that diodes fabricated with H+ ion implantation, have lower threshold current density and better carrier confinement characteristics.

AB - In this study, H+ ion implantation was used to form high resistive regions in an AlGaInP/ GaInP multi-quantum well (MQW) gain guided laser diode. The electrical derivative was used to characterize the properties of the fabricated laser diodes. The equivalent circuits were proposed to model the diodes for various structures. It was found that diodes fabricated with H+ ion implantation, have lower threshold current density and better carrier confinement characteristics.

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EP - 1869

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers

Abstract

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