Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry

Yi Sheng Ting, Chii Chang Chen, Jinn-Kong Sheu, Gou Chung Chi, Jung Tsung Hsu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We propose a novel method to analyze the current-voltage (I-V) characteristics of GaN-based light-emitting diodes (LEDs) with different p-type electrode-mesa geometries. The electrical efficiency is analyzed by calculating the electric field under the quasi-coplanar electrodes of GaN-based LEDs. The experimental results for GaN-based LEDs of chip sizes of 350 × 350 μm2 and 1,000 × 1,000 μm2 with interdigitated fingers are compared. A good agreement is obtained between the experimental and theoretical electrical efficiency of the GaN LEDs with a chip size of 1,000 × 1,000 μm2. The current-crowding effect is analyzed by measuring the electroluminescence spectra of the devices. The result indicates that the current-crowding effect is largely reduced by increasing the number of interdigitated fingers. The electrical efficiency of a LED with a chip size of 1,000 × 1,000 μm2 can be also enhanced by increasing the number of interdigitated fingers, showing the advantages of GaN LED with interdigitated-mesa geometries.

Original languageEnglish
Pages (from-to)312-315
Number of pages4
JournalJournal of Electronic Materials
Volume32
Issue number5
DOIs
Publication statusPublished - 2003 Jan 1

Fingerprint

mesas
Light emitting diodes
light emitting diodes
Geometry
geometry
crowding
chips
Electrodes
electrodes
Electroluminescence
electroluminescence
Electric fields
electric fields
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Ting, Yi Sheng ; Chen, Chii Chang ; Sheu, Jinn-Kong ; Chi, Gou Chung ; Hsu, Jung Tsung. / Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry. In: Journal of Electronic Materials. 2003 ; Vol. 32, No. 5. pp. 312-315.
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Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry. / Ting, Yi Sheng; Chen, Chii Chang; Sheu, Jinn-Kong; Chi, Gou Chung; Hsu, Jung Tsung.

In: Journal of Electronic Materials, Vol. 32, No. 5, 01.01.2003, p. 312-315.

Research output: Contribution to journalArticle

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AU - Hsu, Jung Tsung

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