Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer

Jyh Chen Chen, Gwo Jiun Sheu, Farn Shiun Hwu, Hsueh I. Chen, Jinn-Kong Sheu, Tsung Xian Lee, Ching Cherng Sun

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The effects of current distribution in LED chips on the electrical potential and optical light extraction efficiency are investigated by a numerical simulation. The results show that when the resistivity of the current-spreading layer is decreased there is current-crowding near the n-contact. On the other hand, when the resistivity in the current-spreading layer increases, there is current-crowding near the p-contact. When the current is crowded near the n-contact due to less resistivity of the current-spreading layer, the input power is lower because of the smaller series resistance in the chip, and the light extraction efficiency is higher since the shadowing effect of the p-contact can be avoided. For L p = 50 μm in this study, the light extraction efficiency at ρ ITO = 0.1 × 10 -3 Ω•cm is 1.4 times better than that when L p = 100 μm, even though the driving voltage is raised 1.02 times.

Original languageEnglish
Pages (from-to)213-215
Number of pages3
JournalOptical Review
Volume16
Issue number2
DOIs
Publication statusPublished - 2009 Mar 1

Fingerprint

sapphire
light emitting diodes
chips
electrical resistivity
crowding
current distribution
ITO (semiconductors)
electric potential
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Chen, Jyh Chen ; Sheu, Gwo Jiun ; Hwu, Farn Shiun ; Chen, Hsueh I. ; Sheu, Jinn-Kong ; Lee, Tsung Xian ; Sun, Ching Cherng. / Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer. In: Optical Review. 2009 ; Vol. 16, No. 2. pp. 213-215.
@article{ad681dddc8784b8ca9ff6bd7f6559bf5,
title = "Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer",
abstract = "The effects of current distribution in LED chips on the electrical potential and optical light extraction efficiency are investigated by a numerical simulation. The results show that when the resistivity of the current-spreading layer is decreased there is current-crowding near the n-contact. On the other hand, when the resistivity in the current-spreading layer increases, there is current-crowding near the p-contact. When the current is crowded near the n-contact due to less resistivity of the current-spreading layer, the input power is lower because of the smaller series resistance in the chip, and the light extraction efficiency is higher since the shadowing effect of the p-contact can be avoided. For L p = 50 μm in this study, the light extraction efficiency at ρ ITO = 0.1 × 10 -3 Ω•cm is 1.4 times better than that when L p = 100 μm, even though the driving voltage is raised 1.02 times.",
author = "Chen, {Jyh Chen} and Sheu, {Gwo Jiun} and Hwu, {Farn Shiun} and Chen, {Hsueh I.} and Jinn-Kong Sheu and Lee, {Tsung Xian} and Sun, {Ching Cherng}",
year = "2009",
month = "3",
day = "1",
doi = "10.1007/s10043-009-0039-y",
language = "English",
volume = "16",
pages = "213--215",
journal = "Optical Review",
issn = "1340-6000",
publisher = "Springer-Verlag GmbH and Co. KG",
number = "2",

}

Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer. / Chen, Jyh Chen; Sheu, Gwo Jiun; Hwu, Farn Shiun; Chen, Hsueh I.; Sheu, Jinn-Kong; Lee, Tsung Xian; Sun, Ching Cherng.

In: Optical Review, Vol. 16, No. 2, 01.03.2009, p. 213-215.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer

AU - Chen, Jyh Chen

AU - Sheu, Gwo Jiun

AU - Hwu, Farn Shiun

AU - Chen, Hsueh I.

AU - Sheu, Jinn-Kong

AU - Lee, Tsung Xian

AU - Sun, Ching Cherng

PY - 2009/3/1

Y1 - 2009/3/1

N2 - The effects of current distribution in LED chips on the electrical potential and optical light extraction efficiency are investigated by a numerical simulation. The results show that when the resistivity of the current-spreading layer is decreased there is current-crowding near the n-contact. On the other hand, when the resistivity in the current-spreading layer increases, there is current-crowding near the p-contact. When the current is crowded near the n-contact due to less resistivity of the current-spreading layer, the input power is lower because of the smaller series resistance in the chip, and the light extraction efficiency is higher since the shadowing effect of the p-contact can be avoided. For L p = 50 μm in this study, the light extraction efficiency at ρ ITO = 0.1 × 10 -3 Ω•cm is 1.4 times better than that when L p = 100 μm, even though the driving voltage is raised 1.02 times.

AB - The effects of current distribution in LED chips on the electrical potential and optical light extraction efficiency are investigated by a numerical simulation. The results show that when the resistivity of the current-spreading layer is decreased there is current-crowding near the n-contact. On the other hand, when the resistivity in the current-spreading layer increases, there is current-crowding near the p-contact. When the current is crowded near the n-contact due to less resistivity of the current-spreading layer, the input power is lower because of the smaller series resistance in the chip, and the light extraction efficiency is higher since the shadowing effect of the p-contact can be avoided. For L p = 50 μm in this study, the light extraction efficiency at ρ ITO = 0.1 × 10 -3 Ω•cm is 1.4 times better than that when L p = 100 μm, even though the driving voltage is raised 1.02 times.

UR - http://www.scopus.com/inward/record.url?scp=64749097039&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64749097039&partnerID=8YFLogxK

U2 - 10.1007/s10043-009-0039-y

DO - 10.1007/s10043-009-0039-y

M3 - Article

VL - 16

SP - 213

EP - 215

JO - Optical Review

JF - Optical Review

SN - 1340-6000

IS - 2

ER -