@inproceedings{943bd5cd824d4989b4d7464d24a6882b,
title = "Electrical performance of chlorine-treated AlGaN MOS diodes with i-ZnO insulator",
abstract = "The intrinsic zinc oxide (i-ZnO) film deposited by a vapor cooling condensation system was used as the gate dielectric layer of the AlGaN metal-oxide-semiconductor (MOS) diodes. The chlorine surface treatment of AlGaN was utilized to reduce the surface states resided on the AlGaN surface. Comparing with the untreated AlGaN MOS diodes, the chlorine-treated AlGaN MOS diodes revealed a lower leakage current and a lower interface states density. The experimental results indicated that the chlorine surface treatment could effectively improve the quality of the i-ZnO/AlGaN interface and the electrical performance of the AlGaN MOS diodes with i-ZnO insulator layer.",
author = "Chiou, {Ya Lan} and Lee, {Ching Ting} and Lee, {Hsin Ying} and Chang, {Kuo Jen} and Lin, {Jia Ching} and Chuang, {Hao Wei}",
year = "2011",
month = dec,
day = "1",
doi = "10.1149/1.3629958",
language = "English",
isbn = "9781566779067",
series = "ECS Transactions",
number = "6",
pages = "101--106",
booktitle = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53",
edition = "6",
note = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",
}