Electrical performance of chlorine-treated AlGaN MOS diodes with i-ZnO insulator

Ya Lan Chiou, Ching Ting Lee, Hsin Ying Lee, Kuo Jen Chang, Jia Ching Lin, Hao Wei Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The intrinsic zinc oxide (i-ZnO) film deposited by a vapor cooling condensation system was used as the gate dielectric layer of the AlGaN metal-oxide-semiconductor (MOS) diodes. The chlorine surface treatment of AlGaN was utilized to reduce the surface states resided on the AlGaN surface. Comparing with the untreated AlGaN MOS diodes, the chlorine-treated AlGaN MOS diodes revealed a lower leakage current and a lower interface states density. The experimental results indicated that the chlorine surface treatment could effectively improve the quality of the i-ZnO/AlGaN interface and the electrical performance of the AlGaN MOS diodes with i-ZnO insulator layer.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Pages101-106
Number of pages6
Edition6
DOIs
Publication statusPublished - 2011 Dec 1
EventState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number6
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11-10-0911-10-14

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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