@inproceedings{95e4f3b9914c4443bbd35256294f935c,
title = "Electrical performance of gate-recessed AlGaN/GaN MOS-HEMTs fabricated using photoelectrochemical method",
abstract = "Gate-recessed AlGaN/GaN MOS-HEMTs were fabricated using a photoelectrochemical (PEC) method to form the recessed structure and to directly grow gate insulator on the recessed surface. The resulting devices exhibited better performances than conventional one without gate recess, including a saturation drain-source current of 642 mA/mm, and an off-state breakdown voltage larger than -100V. The normalized noise power spectra of both kinds of devices at the saturation region were well-fitted by the 1/f law and the Hooge's coefficient α in both devices was about 10-4, demonstrating that PEC wet etching is an effective way to achieve a damage-free surface and to improve the DC characteristics of the MOS-HEMTs.",
author = "Chiou, {Ya Lan} and Shiau, {Nan Teng} and Huang, {Li Hsien} and Lou, {Li Ren} and Lee, {Ching Ting}",
year = "2009",
doi = "10.1149/1.3120688",
language = "English",
isbn = "9781566777117",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "73--78",
booktitle = "ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3",
edition = "3",
note = "50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting ; Conference date: 24-05-2009 Through 29-05-2009",
}