Electrical performance of gate-recessed AlGaN/GaN MOS-HEMTs fabricated using photoelectrochemical method

Ya Lan Chiou, Nan Teng Shiau, Li Hsien Huang, Li Ren Lou, Ching Ting Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Gate-recessed AlGaN/GaN MOS-HEMTs were fabricated using a photoelectrochemical (PEC) method to form the recessed structure and to directly grow gate insulator on the recessed surface. The resulting devices exhibited better performances than conventional one without gate recess, including a saturation drain-source current of 642 mA/mm, and an off-state breakdown voltage larger than -100V. The normalized noise power spectra of both kinds of devices at the saturation region were well-fitted by the 1/f law and the Hooge's coefficient α in both devices was about 10-4, demonstrating that PEC wet etching is an effective way to achieve a damage-free surface and to improve the DC characteristics of the MOS-HEMTs.

Original languageEnglish
Title of host publicationECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3
Pages73-78
Number of pages6
Edition3
DOIs
Publication statusPublished - 2009 Dec 1
Event50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting - San Francisco, CA, United States
Duration: 2009 May 242009 May 29

Publication series

NameECS Transactions
Number3
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting
CountryUnited States
CitySan Francisco, CA
Period09-05-2409-05-29

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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