TY - JOUR
T1 - Electrical properties and current conduction mechanisms of LaGdO3 thin film by RF sputtering for RRAM applications
AU - Chien, Chia Shan
AU - Tsai, Meng Hung
AU - Huang, Cheng Liang
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan [MOST 109-2221-E-006-139]. The work was financially sponsored by Ministry of Science and Technology of Taiwan under the projects MOST 109-2221-E-006-139. The authors gratefully acknowledge the use of D8 Discover equipment belonging to the Instrument Center of National Cheng Kung University.
Funding Information:
The work was financially sponsored by Ministry of Science and Technology of Taiwan under the projects MOST 109-2221-E-006-139. The authors gratefully acknowledge the use of D8 Discover equipment belonging to the Instrument Center of National Cheng Kung University.
Publisher Copyright:
© 2020 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of The Korean Ceramic Society and The Ceramic Society of Japan.
PY - 2020/7/2
Y1 - 2020/7/2
N2 - Amorphous LaGdO3 (LGO) thin films were deposited by using RF sputtering system and unipolar resistive switching (URS) properties in the Al/LGO/ITO structure were investigated. The influences of Ar/O2 ratio, film thickness, postannealing condition, and electrode on the RS properties were also studied. The conductive filaments are mostly related to the numbers of oxygen vacancies that can be controlled through a different deposition atmosphere Ar/O2 ratio and film thickness. In addition, the RS characteristics and operating voltage can be improved by postannealing treatment. It is suggested that the In ions diffused from ITO participated in the formation of the filaments of the RRAM. The low resistance state (LRS) and high resistance state (HRS) conduction mechanism in the device were dominated by the Ohmic behavior and Schottky emission, respectively. Also, the RS characteristic is significantly affected by the potential barrier height between top electrode and LGO. The proposed RRAM exhibits unipolar resistive switching characteristic for over 400 times switching cycles and high stable retention characteristic for over 104 seconds with a resistance ratio (RHRS/RLRS) of around 4 orders.
AB - Amorphous LaGdO3 (LGO) thin films were deposited by using RF sputtering system and unipolar resistive switching (URS) properties in the Al/LGO/ITO structure were investigated. The influences of Ar/O2 ratio, film thickness, postannealing condition, and electrode on the RS properties were also studied. The conductive filaments are mostly related to the numbers of oxygen vacancies that can be controlled through a different deposition atmosphere Ar/O2 ratio and film thickness. In addition, the RS characteristics and operating voltage can be improved by postannealing treatment. It is suggested that the In ions diffused from ITO participated in the formation of the filaments of the RRAM. The low resistance state (LRS) and high resistance state (HRS) conduction mechanism in the device were dominated by the Ohmic behavior and Schottky emission, respectively. Also, the RS characteristic is significantly affected by the potential barrier height between top electrode and LGO. The proposed RRAM exhibits unipolar resistive switching characteristic for over 400 times switching cycles and high stable retention characteristic for over 104 seconds with a resistance ratio (RHRS/RLRS) of around 4 orders.
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U2 - 10.1080/21870764.2020.1799913
DO - 10.1080/21870764.2020.1799913
M3 - Article
AN - SCOPUS:85089031180
VL - 8
SP - 948
EP - 956
JO - Journal of Asian Ceramic Societies
JF - Journal of Asian Ceramic Societies
SN - 2187-0764
IS - 3
ER -