Electrical properties of a heterojunction bipolar transistor structure with a resistive gate

Research output: Contribution to journalArticle

Abstract

A conventional heterojunction bipolar transistor with a resistive gate, formed by placing the third location in the depletion region of the collector layer instead of the base layer, is investigated. The influences of the gate voltage on the device performance then strongly depend on the applied voltage. The results show that the device operated under voltage-controlled mode exhibits novel N-shaped negative differential resistance (NDR) characteristics, which have large room temperature NDR peak-to-valley current ratios (e.g. 140 at a gate bias of 1.5 V) and large voltage extension in N-shaped NDR region (about 9 V). However, the device exhibits the transistor characteristics with the current gain of 4 under current-injected mode. The above discrepancies between voltage-controlled and current-injected modes are attributed to the existence of the resistive gate.

Original languageEnglish
Pages (from-to)1595-1598
Number of pages4
JournalSolid State Electronics
Volume37
Issue number9
DOIs
Publication statusPublished - 1994 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Electrical properties of a heterojunction bipolar transistor structure with a resistive gate'. Together they form a unique fingerprint.

  • Cite this