Electrical properties of a-IGZO TFT with various annealing temperature

Yun Heng Hsieh, Meng Chun Chen, Sheng-Yuan Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thinfilm transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages647-650
Number of pages4
ISBN (Electronic)9781510845503
Publication statusPublished - 2015 Jan 1
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 2015 Dec 92015 Dec 11

Publication series

NameProceedings of the International Display Workshops
Volume2
ISSN (Print)1883-2490

Other

Other22nd International Display Workshops, IDW 2015
CountryJapan
CityOtsu
Period15-12-0915-12-11

Fingerprint

Thin film transistors
Interfacial energy
Magnetron sputtering
Hysteresis
Transistors
Electric properties
Annealing
Equipment and Supplies
Temperature

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Hsieh, Y. H., Chen, M. C., & Chu, S-Y. (2015). Electrical properties of a-IGZO TFT with various annealing temperature. In 22nd International Display Workshops, IDW 2015 (pp. 647-650). (Proceedings of the International Display Workshops; Vol. 2). International Display Workshops.
Hsieh, Yun Heng ; Chen, Meng Chun ; Chu, Sheng-Yuan. / Electrical properties of a-IGZO TFT with various annealing temperature. 22nd International Display Workshops, IDW 2015. International Display Workshops, 2015. pp. 647-650 (Proceedings of the International Display Workshops).
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Hsieh, YH, Chen, MC & Chu, S-Y 2015, Electrical properties of a-IGZO TFT with various annealing temperature. in 22nd International Display Workshops, IDW 2015. Proceedings of the International Display Workshops, vol. 2, International Display Workshops, pp. 647-650, 22nd International Display Workshops, IDW 2015, Otsu, Japan, 15-12-09.

Electrical properties of a-IGZO TFT with various annealing temperature. / Hsieh, Yun Heng; Chen, Meng Chun; Chu, Sheng-Yuan.

22nd International Display Workshops, IDW 2015. International Display Workshops, 2015. p. 647-650 (Proceedings of the International Display Workshops; Vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Hsieh YH, Chen MC, Chu S-Y. Electrical properties of a-IGZO TFT with various annealing temperature. In 22nd International Display Workshops, IDW 2015. International Display Workshops. 2015. p. 647-650. (Proceedings of the International Display Workshops).