Abstract
In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.
| Original language | English |
|---|---|
| Title of host publication | 22nd International Display Workshops, IDW 2015 |
| Publisher | International Display Workshops |
| Pages | 121-124 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781510845503 |
| Publication status | Published - 2015 |
| Event | 22nd International Display Workshops, IDW 2015 - Otsu, Japan Duration: 2015 Dec 9 → 2015 Dec 11 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 1 |
| ISSN (Print) | 1883-2490 |
Other
| Other | 22nd International Display Workshops, IDW 2015 |
|---|---|
| Country/Territory | Japan |
| City | Otsu |
| Period | 15-12-09 → 15-12-11 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 3 Good Health and Well-being
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
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