Electrical properties of a-IGZO TFT with various annealing temperature

Yun Henq Hsieh, Menq Chun Chen, Sheng Yuan Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we use rf magnetron sputtering method to fabricate InGaZnO thin-film transistors. We use surface energy to identify the relationship between InGaZnO thin-film transistors with various annealing temperature. We also examine the InGaZnO TFT devices characteristic and hysteresis.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages121-124
Number of pages4
ISBN (Electronic)9781510845503
Publication statusPublished - 2015 Jan 1
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 2015 Dec 92015 Dec 11

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other22nd International Display Workshops, IDW 2015
CountryJapan
CityOtsu
Period15-12-0915-12-11

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Fingerprint Dive into the research topics of 'Electrical properties of a-IGZO TFT with various annealing temperature'. Together they form a unique fingerprint.

Cite this