Electrical properties of a single p-type ZnO nanowire by Ga implantation with FIB

Wen Huei Chu, Chuan-Pu Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

ZnO nanowires were implanted with Ga+ ions with a dose of 1012 cm-2 and a field effect transistor (FET) device with a single Ga-doped ZnO nanowire was fabricated in a combined scanning-electron- microscope/focused-ion-beam (SEM/FIB) system. Resistance measurements performed on a single Ga-doped ZnO nanowire show the ohmic contact behavior in current-voltage curves. Moreover, resistance roughly tends to decrease with the gate voltage changes from 1V to -6V, indicating the p-type behavior. The electrical activation energy for the hole carriers due to thermal activation is estimated to be ∼229.5±2.8 meV.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011 Sep 26
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 2011 Jun 212011 Jun 24

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period11-06-2111-06-24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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