TY - GEN
T1 - Electrical properties of a single p-type ZnO nanowire by Ga implantation with FIB
AU - Chu, Wen Huei
AU - Liu, Chuan Pu
PY - 2011
Y1 - 2011
N2 - ZnO nanowires were implanted with Ga+ ions with a dose of 1012 cm-2 and a field effect transistor (FET) device with a single Ga-doped ZnO nanowire was fabricated in a combined scanning-electron- microscope/focused-ion-beam (SEM/FIB) system. Resistance measurements performed on a single Ga-doped ZnO nanowire show the ohmic contact behavior in current-voltage curves. Moreover, resistance roughly tends to decrease with the gate voltage changes from 1V to -6V, indicating the p-type behavior. The electrical activation energy for the hole carriers due to thermal activation is estimated to be ∼229.5±2.8 meV.
AB - ZnO nanowires were implanted with Ga+ ions with a dose of 1012 cm-2 and a field effect transistor (FET) device with a single Ga-doped ZnO nanowire was fabricated in a combined scanning-electron- microscope/focused-ion-beam (SEM/FIB) system. Resistance measurements performed on a single Ga-doped ZnO nanowire show the ohmic contact behavior in current-voltage curves. Moreover, resistance roughly tends to decrease with the gate voltage changes from 1V to -6V, indicating the p-type behavior. The electrical activation energy for the hole carriers due to thermal activation is estimated to be ∼229.5±2.8 meV.
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U2 - 10.1109/INEC.2011.5991791
DO - 10.1109/INEC.2011.5991791
M3 - Conference contribution
AN - SCOPUS:80053002761
SN - 9781457703799
T3 - Proceedings - International NanoElectronics Conference, INEC
BT - 4th IEEE International NanoElectronics Conference, INEC 2011
T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011
Y2 - 21 June 2011 through 24 June 2011
ER -