TY - JOUR
T1 - Electrical properties of amorphous zinc-indium-tin oxide semiconductor thin-film transistors
AU - Li, Chih Wei
AU - Chang, Sheng Po
AU - Chang, Shoou Jinn
N1 - Publisher Copyright:
Copyright © 2014 American Scientific Publishers. All rights reserved.
PY - 2014/4/1
Y1 - 2014/4/1
N2 - The electrical properties of transparent amorphous zinc-indium-tin oxide (a-ZITO) thin films and the characteristics of thin-film transistors (TFTs) based on these films were examined as functions of the ZITO chemical composition. The ZITO thin films were deposited by cosputtering. By adjusting the content ratio of ZnO and ITO, high-performance a-ZITO TFTs could be fabricated. The a-ZITO TFTs exhibited optimal performance when the a-ZITO film was deposited by sputtering ZnO at a power of 80 W and ITO at a power of 50 W, with the oxygen partial pressure being 4%. The chemical composition of the thin film that exhibited the optimal performance was Zn/In/Sn = 0.53:0.38:0.09. The ZITO TFTs exhibited enhanced-mode operation and a threshold voltage of 0.9 V, an on/off current ratio of 4.7×105, a subthreshold swing of 0.294 V/decade, and a field-effect mobility of 5.32 cm2 V-1 s-1.
AB - The electrical properties of transparent amorphous zinc-indium-tin oxide (a-ZITO) thin films and the characteristics of thin-film transistors (TFTs) based on these films were examined as functions of the ZITO chemical composition. The ZITO thin films were deposited by cosputtering. By adjusting the content ratio of ZnO and ITO, high-performance a-ZITO TFTs could be fabricated. The a-ZITO TFTs exhibited optimal performance when the a-ZITO film was deposited by sputtering ZnO at a power of 80 W and ITO at a power of 50 W, with the oxygen partial pressure being 4%. The chemical composition of the thin film that exhibited the optimal performance was Zn/In/Sn = 0.53:0.38:0.09. The ZITO TFTs exhibited enhanced-mode operation and a threshold voltage of 0.9 V, an on/off current ratio of 4.7×105, a subthreshold swing of 0.294 V/decade, and a field-effect mobility of 5.32 cm2 V-1 s-1.
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U2 - 10.1166/nnl.2014.1765
DO - 10.1166/nnl.2014.1765
M3 - Article
AN - SCOPUS:84918530728
SN - 1941-4900
VL - 6
SP - 273
EP - 278
JO - Nanoscience and Nanotechnology Letters
JF - Nanoscience and Nanotechnology Letters
IS - 4
ER -