Crystalline BaTiO3 thin films were prepared directly on Ti substrates in aqueous solutions of Ba(OH)2 at 150°C by a hydrothermal-electrochemical method and their electrical properties for capacitors were measured. The leakage current-voltage characteristics exhibited rectifications, the degree of which depended on the top electrodes used. Resistivities as high as 1012 Ω·cm were obtained in the voltage range up to 2 V for the 0.40-μm-thick BaTiO3 thin film and its breakdown voltage was higher than 12 V. The grown films were paraelectric with dielectric constants of 340-350 and dielectric losses of 7-10% at 1 kHz. 0.1 Vrms. and 25°C. The capacitance variation with dc bias voltage from -2.5 to +2.5 V was 9% of the zero-bias value, and that with temperature from -60° to 130°C was 24% of the room-temperature value.
|Number of pages||7|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||3 SUPPL. A|
|Publication status||Published - 1997 Mar|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)