Electrical properties of defect-fluorite phase in the system R2O3-Ta2O5 (R Gd, Y, Er and Yb)

Shin Kim; Masatomo Yashima; Masato Kakihana; Masahiro Yoshimura

doi:10.1016/0925-8388(93)90189-T

Electrical properties of defect-fluorite phase in the system R₂O₃-Ta₂O₅ (R Gd, Y, Er and Yb)

Shin Kim, Masatomo Yashima, Masato Kakihana, Masahiro Yoshimura

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The electrical properties of the new fluorite-type phase R_0.8Ta_0.2O_1.7{right angle, 90 degree} ⊥_0.3 in the system R₂O₃-Ta₂O₅ (R Gd, Y, Er and Yb) were studied. This fluorite phase had a p-type conductivity above 10^-3 atm of oxygen partial pressure in the temperature range 650-1250 °C. In the oxygen partial pressure range between 10^-4 and 10^-21 atm, it showed an ionic conductivity which could occur by the diffusion of oxygen ions through oxygen vacancies.

Original language	English
Pages (from-to)	72-74
Number of pages	3
Journal	Journal of Alloys and Compounds
Volume	192
Issue number	1-2
DOIs	https://doi.org/10.1016/0925-8388(93)90189-T
Publication status	Published - 1993 Feb 23

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/0925-8388(93)90189-T

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AU - Kim, Shin

AU - Yashima, Masatomo

AU - Kakihana, Masato

AU - Yoshimura, Masahiro

PY - 1993/2/23

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N2 - The electrical properties of the new fluorite-type phase R0.8Ta0.2O1.7{right angle, 90 degree} ⊥0.3 in the system R2O3-Ta2O5 (R Gd, Y, Er and Yb) were studied. This fluorite phase had a p-type conductivity above 10-3 atm of oxygen partial pressure in the temperature range 650-1250 °C. In the oxygen partial pressure range between 10-4 and 10-21 atm, it showed an ionic conductivity which could occur by the diffusion of oxygen ions through oxygen vacancies.

AB - The electrical properties of the new fluorite-type phase R0.8Ta0.2O1.7{right angle, 90 degree} ⊥0.3 in the system R2O3-Ta2O5 (R Gd, Y, Er and Yb) were studied. This fluorite phase had a p-type conductivity above 10-3 atm of oxygen partial pressure in the temperature range 650-1250 °C. In the oxygen partial pressure range between 10-4 and 10-21 atm, it showed an ionic conductivity which could occur by the diffusion of oxygen ions through oxygen vacancies.

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Electrical properties of defect-fluorite phase in the system R₂O₃-Ta₂O₅ (R Gd, Y, Er and Yb)

Abstract

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