Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method

Dei Wei Chou; Hwei Heng Wang; Yeong Her Wang; Mau Phon Houng

doi:10.1016/S0254-0584(02)00424-8

Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method

Dei Wei Chou, Hwei Heng Wang, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The oxide films prepared by liquid phase chemical-enhanced technique were electrically characterized using current-voltage and capacitance-voltage measurements on metal-oxide-semiconductor (MOS) structure. It was found that the leakage current density is roughly (1-2) × 10^-6 A cm^-2 at the electric filed of 1 MV cm^-1. The oxides with denser structures exhibit higher refractive indices, higher reliability and also higher breakdown voltages. The breakdown fields of ∼ 7 MV cm^-1 were obtained as refractive index is ∼2.12. In addition, dielectric constant of oxide films is found to increase with increasing thickness and varies within a wide range from 3.2 to 11 under accumulation region. Furthermore, short time ramp-voltage, constant-voltage and constant-current stress are employed to reliability study.

Original language	English
Pages (from-to)	772-777
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	78
Issue number	3
DOIs	https://doi.org/10.1016/S0254-0584(02)00424-8
Publication status	Published - 2003 Feb 28

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

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10.1016/S0254-0584(02)00424-8

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@article{3fdba30dd5a34c988cff0f81505cd68c,

title = "Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method",

abstract = "The oxide films prepared by liquid phase chemical-enhanced technique were electrically characterized using current-voltage and capacitance-voltage measurements on metal-oxide-semiconductor (MOS) structure. It was found that the leakage current density is roughly (1-2) × 10-6 A cm-2 at the electric filed of 1 MV cm-1. The oxides with denser structures exhibit higher refractive indices, higher reliability and also higher breakdown voltages. The breakdown fields of ∼ 7 MV cm-1 were obtained as refractive index is ∼2.12. In addition, dielectric constant of oxide films is found to increase with increasing thickness and varies within a wide range from 3.2 to 11 under accumulation region. Furthermore, short time ramp-voltage, constant-voltage and constant-current stress are employed to reliability study.",

author = "Chou, {Dei Wei} and Wang, {Hwei Heng} and Wang, {Yeong Her} and Houng, {Mau Phon}",

note = "Funding Information: This work was supported in part by the National Science Council under the contract no.: NSC87-2215-E-006-019 and the Foundation of Chen, Jieh-Chen Scholarship, Tainan, Taiwan. ",

year = "2003",

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doi = "10.1016/S0254-0584(02)00424-8",

language = "English",

volume = "78",

pages = "772--777",

journal = "Materials Chemistry and Physics",

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T1 - Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method

AU - Chou, Dei Wei

AU - Wang, Hwei Heng

AU - Wang, Yeong Her

AU - Houng, Mau Phon

N1 - Funding Information: This work was supported in part by the National Science Council under the contract no.: NSC87-2215-E-006-019 and the Foundation of Chen, Jieh-Chen Scholarship, Tainan, Taiwan.

PY - 2003/2/28

Y1 - 2003/2/28

N2 - The oxide films prepared by liquid phase chemical-enhanced technique were electrically characterized using current-voltage and capacitance-voltage measurements on metal-oxide-semiconductor (MOS) structure. It was found that the leakage current density is roughly (1-2) × 10-6 A cm-2 at the electric filed of 1 MV cm-1. The oxides with denser structures exhibit higher refractive indices, higher reliability and also higher breakdown voltages. The breakdown fields of ∼ 7 MV cm-1 were obtained as refractive index is ∼2.12. In addition, dielectric constant of oxide films is found to increase with increasing thickness and varies within a wide range from 3.2 to 11 under accumulation region. Furthermore, short time ramp-voltage, constant-voltage and constant-current stress are employed to reliability study.

AB - The oxide films prepared by liquid phase chemical-enhanced technique were electrically characterized using current-voltage and capacitance-voltage measurements on metal-oxide-semiconductor (MOS) structure. It was found that the leakage current density is roughly (1-2) × 10-6 A cm-2 at the electric filed of 1 MV cm-1. The oxides with denser structures exhibit higher refractive indices, higher reliability and also higher breakdown voltages. The breakdown fields of ∼ 7 MV cm-1 were obtained as refractive index is ∼2.12. In addition, dielectric constant of oxide films is found to increase with increasing thickness and varies within a wide range from 3.2 to 11 under accumulation region. Furthermore, short time ramp-voltage, constant-voltage and constant-current stress are employed to reliability study.

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VL - 78

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JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

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ER -

Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method

Abstract

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