Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method

Dei Wei Chou, Hwei Heng Wang, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The oxide films prepared by liquid phase chemical-enhanced technique were electrically characterized using current-voltage and capacitance-voltage measurements on metal-oxide-semiconductor (MOS) structure. It was found that the leakage current density is roughly (1-2) × 10-6 A cm-2 at the electric filed of 1 MV cm-1. The oxides with denser structures exhibit higher refractive indices, higher reliability and also higher breakdown voltages. The breakdown fields of ∼ 7 MV cm-1 were obtained as refractive index is ∼2.12. In addition, dielectric constant of oxide films is found to increase with increasing thickness and varies within a wide range from 3.2 to 11 under accumulation region. Furthermore, short time ramp-voltage, constant-voltage and constant-current stress are employed to reliability study.

Original languageEnglish
Pages (from-to)772-777
Number of pages6
JournalMaterials Chemistry and Physics
Volume78
Issue number3
DOIs
Publication statusPublished - 2003 Feb 28

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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