TY - JOUR
T1 - Electrical properties of high-quality stacked CdTe/photo-enhanced native oxide for HgCdTe passivation
AU - Su, Yan Kuin
AU - Lin, Chung Te
AU - Huang, Hsin Tien
AU - Chang, Shoou Jinn
AU - Sun, Tai Ping
AU - Chen, Gin Shiang
AU - Luo, Jiunn Jye
PY - 1996/2
Y1 - 1996/2
N2 - A novel surface treatment method for obtaining a high-quality CdTe/HgCdTe interface is proposed. By stacking photoenhanced native oxide and CdTe films, we successfully passivated HgCdTe. This technique is advantageous because photoenhanced native oxides can form an excellent interface and adhere to HgCdTe substrate well. Using this novel technique, we have fabricated metal/CdTe/photoenhanced native oxide/HgCdTe structured metal-insulator-semiconductor (MIS) capacitors. From capacitance-voltage (C-V) measurement, we found that the flat-band voltage of such a MIS capacitor is about -0.2V with a fixed oxide charge of 1 × 1010 cm-2. For comparison, conventional metal/CdTe/HgCdTe structured MIS capacitors were also fabricated. We found that capacitors with the photoenhanced native oxide layer have a much lower leakage current. Such a marked leakage current reduction is due to the good interfacial properties between the photoenhanced native oxide and the HgCdTe substrate.
AB - A novel surface treatment method for obtaining a high-quality CdTe/HgCdTe interface is proposed. By stacking photoenhanced native oxide and CdTe films, we successfully passivated HgCdTe. This technique is advantageous because photoenhanced native oxides can form an excellent interface and adhere to HgCdTe substrate well. Using this novel technique, we have fabricated metal/CdTe/photoenhanced native oxide/HgCdTe structured metal-insulator-semiconductor (MIS) capacitors. From capacitance-voltage (C-V) measurement, we found that the flat-band voltage of such a MIS capacitor is about -0.2V with a fixed oxide charge of 1 × 1010 cm-2. For comparison, conventional metal/CdTe/HgCdTe structured MIS capacitors were also fabricated. We found that capacitors with the photoenhanced native oxide layer have a much lower leakage current. Such a marked leakage current reduction is due to the good interfacial properties between the photoenhanced native oxide and the HgCdTe substrate.
UR - http://www.scopus.com/inward/record.url?scp=0030078910&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030078910&partnerID=8YFLogxK
U2 - 10.1143/jjap.35.1165
DO - 10.1143/jjap.35.1165
M3 - Article
AN - SCOPUS:0030078910
SN - 0021-4922
VL - 35
SP - 1165
EP - 1167
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 2 SUPPL. B
ER -