Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this study, radio-frequency (RF) magnetron sputtering was used to deposit a 50 nm indium aluminum zinc oxide (IAZO) channel layer, following which a bottom-gate thin-film transistor (TFT) was fabricated. The oxygen ratio for the IAZO thin film was modulated from 0% to 6%. The film remained amorphous at annealing temperatures of 300°C and 500°C. Analysis of optical properties (performed via UV–Vis spectroscopy) shows that the bandgap increased from 5.24 eV to 5.32 eV when the oxygen flow ratio increased from 0% to 4%. The bandgap decreased to 5.19 eV when the flow ratio reached 6%. An appropriate variation of the O2/Ar flow ratio filled oxygen vacancies and improved the electrical properties; however, a higher oxygen ratio led to the regeneration of oxygen vacancies and degraded the device. TFTs with an oxygen flow ratio of 2% had a high mobility of 5.67 cm2/Vs, Ion/Ioff 3.37 × 106, and S.S. 0.61 V/dec.

Original languageEnglish
Pages (from-to)6923-6928
Number of pages6
JournalJournal of Electronic Materials
Volume47
Issue number11
DOIs
Publication statusPublished - 2018 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors'. Together they form a unique fingerprint.

  • Cite this