TY - JOUR
T1 - Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors
AU - Cheng, Tien Hung
AU - Chang, Sheng Po
AU - Chang, Shoou Jinn
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology under contract number MOST 106-2221-E-006-178 and 105-2221-E-006-118. This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, and by the Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education.
Publisher Copyright:
© 2018, The Minerals, Metals & Materials Society.
PY - 2018/11/1
Y1 - 2018/11/1
N2 - In this study, radio-frequency (RF) magnetron sputtering was used to deposit a 50 nm indium aluminum zinc oxide (IAZO) channel layer, following which a bottom-gate thin-film transistor (TFT) was fabricated. The oxygen ratio for the IAZO thin film was modulated from 0% to 6%. The film remained amorphous at annealing temperatures of 300°C and 500°C. Analysis of optical properties (performed via UV–Vis spectroscopy) shows that the bandgap increased from 5.24 eV to 5.32 eV when the oxygen flow ratio increased from 0% to 4%. The bandgap decreased to 5.19 eV when the flow ratio reached 6%. An appropriate variation of the O2/Ar flow ratio filled oxygen vacancies and improved the electrical properties; however, a higher oxygen ratio led to the regeneration of oxygen vacancies and degraded the device. TFTs with an oxygen flow ratio of 2% had a high mobility of 5.67 cm2/Vs, Ion/Ioff 3.37 × 106, and S.S. 0.61 V/dec.
AB - In this study, radio-frequency (RF) magnetron sputtering was used to deposit a 50 nm indium aluminum zinc oxide (IAZO) channel layer, following which a bottom-gate thin-film transistor (TFT) was fabricated. The oxygen ratio for the IAZO thin film was modulated from 0% to 6%. The film remained amorphous at annealing temperatures of 300°C and 500°C. Analysis of optical properties (performed via UV–Vis spectroscopy) shows that the bandgap increased from 5.24 eV to 5.32 eV when the oxygen flow ratio increased from 0% to 4%. The bandgap decreased to 5.19 eV when the flow ratio reached 6%. An appropriate variation of the O2/Ar flow ratio filled oxygen vacancies and improved the electrical properties; however, a higher oxygen ratio led to the regeneration of oxygen vacancies and degraded the device. TFTs with an oxygen flow ratio of 2% had a high mobility of 5.67 cm2/Vs, Ion/Ioff 3.37 × 106, and S.S. 0.61 V/dec.
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U2 - 10.1007/s11664-018-6618-6
DO - 10.1007/s11664-018-6618-6
M3 - Article
AN - SCOPUS:85052826852
SN - 0361-5235
VL - 47
SP - 6923
EP - 6928
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 11
ER -