Electrical properties of Ir-silicide formation on p-Si(100) in ultra-high vacuum

C. K. Chung, J. Hwang, T. H. Jaw, D. S. Wuu

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8 Citations (Scopus)


An epitaxial Ir-silicide film was grown on top of a p-Si(100) substrate a temperature of 450 °C in an ultra-high vacuum. The epitaxial Ir-silicide film was identified to be Ir3Si4 with four types of epitaxial modes. The average Schottky barrier height of the epitaxial Ir3Si4/p-Si(100) diode at 60-100 K was determined to be 0.177 eV with an ideality factor of 1.12. In contrast, a polycrystalline IrSi/p-Si(100) diode was formed by conventional room-temperature deposition and annealing at high temperatures, and its average Schottky barrier height was 0.157 eV with an ideality factor of 1.08. The difference in Schottky barrier height was attributed to the merged effect of phase composition and microstructure difference between Ir3Si4 and IrSi silicides. The epitaxial Ir3Si4/p-Si(100) diode has higher n values than polycrystalline IrSi/p-Si(100) due to more interfacial states of oxygen remaining at the Ir3Si4/p-Si(100) interface.

Original languageEnglish
Pages (from-to)68-72
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2000 Sep 3

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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