Electrical properties of single-crystal silicon layers formed from polycrystalline silicon by solid phase epitaxy

K. L. Wang; G. P. Li; T. W. Sigmon

doi:10.1063/1.92857

Electrical properties of single-crystal silicon layers formed from polycrystalline silicon by solid phase epitaxy

K. L. Wang, G. P. Li, T. W. Sigmon

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The electrical evaluation of metal-oxide-semiconductor (MOS) capacitors fabricated on thin films formed by low-temperature epitaxial crystallization of amorphized polysilicon layers on single-crystal Si substrates is presented. Shallow dopant and deep-level defect distributions are obtained using fast C(V) and deep-level transient spectroscopy, respectively. The dominant deep-level defects are observed to be at E_c -0.074 eV, E_c -0.15 eV, and E_c -0.46 eV. Both the shallow dopant and deep-level defect distributions exhibit peak concentrations near the original poly/single-crystal interface. These defects and impurities are attributed to gettering by oxygen of contaminant impurities. It is concluded from the data that these films are of suitable quality for MOS device fabrication, and techniques are suggested to further decrease the observed defect concentrations.

Original language	English
Pages (from-to)	709-711
Number of pages	3
Journal	Applied Physics Letters
Volume	39
Issue number	9
DOIs	https://doi.org/10.1063/1.92857
Publication status	Published - 1981

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.92857

Cite this

@article{6349247014fd44c4b1de1fcada986f70,

title = "Electrical properties of single-crystal silicon layers formed from polycrystalline silicon by solid phase epitaxy",

abstract = "The electrical evaluation of metal-oxide-semiconductor (MOS) capacitors fabricated on thin films formed by low-temperature epitaxial crystallization of amorphized polysilicon layers on single-crystal Si substrates is presented. Shallow dopant and deep-level defect distributions are obtained using fast C(V) and deep-level transient spectroscopy, respectively. The dominant deep-level defects are observed to be at Ec -0.074 eV, Ec -0.15 eV, and Ec -0.46 eV. Both the shallow dopant and deep-level defect distributions exhibit peak concentrations near the original poly/single-crystal interface. These defects and impurities are attributed to gettering by oxygen of contaminant impurities. It is concluded from the data that these films are of suitable quality for MOS device fabrication, and techniques are suggested to further decrease the observed defect concentrations.",

author = "Wang, {K. L.} and Li, {G. P.} and Sigmon, {T. W.}",

year = "1981",

doi = "10.1063/1.92857",

language = "English",

volume = "39",

pages = "709--711",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Electrical properties of single-crystal silicon layers formed from polycrystalline silicon by solid phase epitaxy

AU - Wang, K. L.

AU - Li, G. P.

AU - Sigmon, T. W.

PY - 1981

Y1 - 1981

N2 - The electrical evaluation of metal-oxide-semiconductor (MOS) capacitors fabricated on thin films formed by low-temperature epitaxial crystallization of amorphized polysilicon layers on single-crystal Si substrates is presented. Shallow dopant and deep-level defect distributions are obtained using fast C(V) and deep-level transient spectroscopy, respectively. The dominant deep-level defects are observed to be at Ec -0.074 eV, Ec -0.15 eV, and Ec -0.46 eV. Both the shallow dopant and deep-level defect distributions exhibit peak concentrations near the original poly/single-crystal interface. These defects and impurities are attributed to gettering by oxygen of contaminant impurities. It is concluded from the data that these films are of suitable quality for MOS device fabrication, and techniques are suggested to further decrease the observed defect concentrations.

AB - The electrical evaluation of metal-oxide-semiconductor (MOS) capacitors fabricated on thin films formed by low-temperature epitaxial crystallization of amorphized polysilicon layers on single-crystal Si substrates is presented. Shallow dopant and deep-level defect distributions are obtained using fast C(V) and deep-level transient spectroscopy, respectively. The dominant deep-level defects are observed to be at Ec -0.074 eV, Ec -0.15 eV, and Ec -0.46 eV. Both the shallow dopant and deep-level defect distributions exhibit peak concentrations near the original poly/single-crystal interface. These defects and impurities are attributed to gettering by oxygen of contaminant impurities. It is concluded from the data that these films are of suitable quality for MOS device fabrication, and techniques are suggested to further decrease the observed defect concentrations.

UR - http://www.scopus.com/inward/record.url?scp=36749113983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36749113983&partnerID=8YFLogxK

U2 - 10.1063/1.92857

DO - 10.1063/1.92857

M3 - Article

AN - SCOPUS:36749113983

VL - 39

SP - 709

EP - 711

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -

Electrical properties of single-crystal silicon layers formed from polycrystalline silicon by solid phase epitaxy

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this