Electrical properties of single-crystal silicon layers formed from polycrystalline silicon by solid phase epitaxy

K. L. Wang, G. P. Li, T. W. Sigmon

Research output: Contribution to journalArticlepeer-review

Abstract

The electrical evaluation of metal-oxide-semiconductor (MOS) capacitors fabricated on thin films formed by low-temperature epitaxial crystallization of amorphized polysilicon layers on single-crystal Si substrates is presented. Shallow dopant and deep-level defect distributions are obtained using fast C(V) and deep-level transient spectroscopy, respectively. The dominant deep-level defects are observed to be at Ec -0.074 eV, Ec -0.15 eV, and Ec -0.46 eV. Both the shallow dopant and deep-level defect distributions exhibit peak concentrations near the original poly/single-crystal interface. These defects and impurities are attributed to gettering by oxygen of contaminant impurities. It is concluded from the data that these films are of suitable quality for MOS device fabrication, and techniques are suggested to further decrease the observed defect concentrations.

Original languageEnglish
Pages (from-to)709-711
Number of pages3
JournalApplied Physics Letters
Volume39
Issue number9
DOIs
Publication statusPublished - 1981

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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