Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor

J. H. Tsai, W. Ch Liu, D. F. Guo, Y. Ch Kang, Sh Y. Chiu, W. Sh Lour

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The dc performances of an InP/InGaAs pnp heterostructure-emitter bipolar transistor are investigated by theoretical analysis and experimental results. Though the valence band discontinuity at the InP/InGaAs heterojunction is relatively large, the addition of a heavily-doped as well as thin p +-InGaAs emitter layer between p-InP confinement and n +-InGaAs base layers effectively eliminates the potential spike at emitter-base junction and simultaneously lowers the emitter-collector offset voltage and increases the potential barrier for electrons. Experimentally, a high current gain of 88 and a low offset voltage of 54 mV have been achieved.

Original languageEnglish
Pages (from-to)346-349
Number of pages4
JournalSemiconductors
Volume42
Issue number3
DOIs
Publication statusPublished - 2008 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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