Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, G. S. Chen, T. P. Sun, J. J. Luo

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22 Citations (Scopus)

Abstract

A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D2) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 1010 cm-2.

Original languageEnglish
Pages (from-to)676-678
Number of pages3
JournalIEEE Photonics Technology Letters
Volume8
Issue number5
DOIs
Publication statusPublished - 1996 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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