Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

C. T. Lin; Y. K. Su; H. T. Huang; S. J. Chang; G. S. Chen; T. P. Sun; J. J. Luo

doi:10.1109/68.491592

Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

C. T. Lin
, Y. K. Su
, H. T. Huang
, S. J. Chang
, G. S. Chen
, T. P. Sun
, J. J. Luo

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D₂) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 10¹⁰ cm^-2.

Original language	English
Pages (from-to)	676-678
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	8
Issue number	5
DOIs	https://doi.org/10.1109/68.491592
Publication status	Published - 1996 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.491592

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title = "Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes",

abstract = "A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D2) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 1010 cm-2.",

author = "Lin, \{C. T.\} and Su, \{Y. K.\} and Huang, \{H. T.\} and Chang, \{S. J.\} and Chen, \{G. S.\} and Sun, \{T. P.\} and Luo, \{J. J.\}",

note = "Funding Information: Manuscript received November 6, 1995; revised January 16, 1996. This work was supported by the Chung Institute of Science and Technology under Contract CS 84-0210-D-006-007 and National Science Council, Republic of China, under Contract NSC.84-2215-E-006-002. C. T. Lin, Y. K. Su, H. T. Huang, and S. J. Chang are with the Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C. G. S. Chen, T. P. Sun, and J. J. Luo are with the Chung Shan Institute of Science and Technology, Lung-Tan, Taiwan, R.O.C. Publisher Item Identifier S 1041-11 35(96)03596-3.",

year = "1996",

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T1 - Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

AU - Lin, C. T.

AU - Su, Y. K.

AU - Huang, H. T.

AU - Chang, S. J.

AU - Chen, G. S.

AU - Sun, T. P.

AU - Luo, J. J.

N1 - Funding Information: Manuscript received November 6, 1995; revised January 16, 1996. This work was supported by the Chung Institute of Science and Technology under Contract CS 84-0210-D-006-007 and National Science Council, Republic of China, under Contract NSC.84-2215-E-006-002. C. T. Lin, Y. K. Su, H. T. Huang, and S. J. Chang are with the Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C. G. S. Chen, T. P. Sun, and J. J. Luo are with the Chung Shan Institute of Science and Technology, Lung-Tan, Taiwan, R.O.C. Publisher Item Identifier S 1041-11 35(96)03596-3.

PY - 1996/5

Y1 - 1996/5

N2 - A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D2) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 1010 cm-2.

AB - A new surface treatment method, i.e., stacked ZnS/photo-enhanced native oxide, is proposed for HgCdTe passivation. The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D2) lamp as the optical source. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 × 1010 cm-2.

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Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

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