Electrical Properties of the Thin Film Transistor with IGZO Channel and ZrO2/LaAlO3 Gate Dielectric Stack

Cheng-Han Wu, K. M. Chang, H. Y. Hsu, Wei-Hsuan Hsu, Shui-Jinn Wang, Yung-Chun Liu, James Jiunn Yin Leu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	26th International Microprocesses and Nanotechnology Conference (MNC 2013)
Place of Publication	Sapporo, Hokkaido, Japan
Publication status	Published - 2013 Dec 5

Cite this

@inproceedings{9e9a3dc83c0145b48617800ba41ea562,

title = "Electrical Properties of the Thin Film Transistor with IGZO Channel and ZrO2/LaAlO3 Gate Dielectric Stack",

author = "Cheng-Han Wu and Chang, {K. M.} and Hsu, {H. Y.} and Wei-Hsuan Hsu and Shui-Jinn Wang and Yung-Chun Liu and Leu, {James Jiunn Yin}",

year = "2013",

month = dec,

day = "5",

language = "English",

booktitle = "26th International Microprocesses and Nanotechnology Conference (MNC 2013)",

}

TY - GEN

T1 - Electrical Properties of the Thin Film Transistor with IGZO Channel and ZrO2/LaAlO3 Gate Dielectric Stack

AU - Wu, Cheng-Han

AU - Chang, K. M.

AU - Hsu, H. Y.

AU - Hsu, Wei-Hsuan

AU - Wang, Shui-Jinn

AU - Liu, Yung-Chun

AU - Leu, James Jiunn Yin

PY - 2013/12/5

Y1 - 2013/12/5

M3 - Conference contribution

BT - 26th International Microprocesses and Nanotechnology Conference (MNC 2013)

CY - Sapporo, Hokkaido, Japan

ER -