Electrical Properties of the Thin Film Transistor with IGZO Channel and ZrO2/LaAlO3 Gate Dielectric Stack

Cheng-Han Wu, K. M. Chang, H. Y. Hsu, Wei-Hsuan Hsu, Shui-Jinn Wang, Yung-Chun Liu, James Jiunn Yin Leu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication26th International Microprocesses and Nanotechnology Conference (MNC 2013)
Place of PublicationSapporo, Hokkaido, Japan
Publication statusPublished - 2013 Dec 5

Cite this

Wu, C-H., Chang, K. M., Hsu, H. Y., Hsu, W-H., Wang, S-J., Liu, Y-C., & Leu, J. J. Y. (2013). Electrical Properties of the Thin Film Transistor with IGZO Channel and ZrO2/LaAlO3 Gate Dielectric Stack. In 26th International Microprocesses and Nanotechnology Conference (MNC 2013)